Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Mothes, Robert"'
Autor:
Mueller, Steve, Waechtler, Thomas, Hofmann, Lutz, Tuchscherer, Andre, Mothes, Robert, Gordan, Ovidiu, Lehmann, Daniel, Haidu, Francisc, Ogiewa, Marcel, Gerlich, Lukas, Ding, Shao-Feng, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Zahn, Dietrich R.T., Qu, Xin-Ping
Publikováno v:
Semiconductor Conference Dresden (SCD), 27-28 Sept. 2011, Dresden, Germany; DOI: 10.1109/SCD.2011.6068736
In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner mater
Autor:
Dhakal, Dileep, Waechtler, Thomas, E. Schulz, Stefan, Gessner, Thomas, Lang, Heinrich, Mothes, Robert, Tuchscherer, Andre
This article has been published online on 21st May 2014, in Journal of Vacuum Science & Technology A: Vac (Vol.32, Issue 4): http://scitation.aip.org/content/avs/journal/jvsta/32/4/10.1116/1.4878815?aemail=author DOI: 10.1116/1.4878815 This article m
Autor:
Waechtler, Thomas, Roth, Nina, Mothes, Robert, Schulze, Steffen, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Hietschold, Michael
Publikováno v:
ECS Transactions, Vol. 25, No. 4, pp. 277-287 (2009); Digital Object Identifier (DOI): 10.1149/1.3205062
The atomic layer deposition (ALD) of copper oxide films from [(nBu3P)2Cu(acac)] and wet oxygen on SiO2 and TaN has been studied in detail by spectroscopic ellipsometry and atomic force microscopy. The results suggest island growth on SiO2, along with
Autor:
Dhakal, Dileep, Waechtler, Thomas, E. Schulz, Stefan, Mothes, Robert, Lang, Heinrich, Gessner, Thomas
This poster was presented in the Materials for Advanced Metallization (MAM) 2014 Conference in Chemnitz, Germany. Abstract: Atomic Layer Deposition (ALD) has emerged as an ubiquitous method for the deposition of conformal and homogeneous ultra-thin f
Autor:
Dhakal, Dileep, Waechtler, Thomas, E. Schulz, Stefan, Mothes, Robert, Moeckel, Stefan, Lang, Heinrich, Gessner, Thomas
This talk was presented in the 14th International Conference on Atomic Layer Deposition (ALD 2014) in Kyoto, Japan on 18th June 2014. Abstract Atomic Layer Deposition (ALD) is emerging as a ubiquitous method for the deposition of conformal and homoge
Autor:
Melzer, Marcel, Waechtler, Thomas, Müller, Steve, Fiedler, Holger, Hermann, Sascha, Rodriguez, Raul D., Villabona, Alexander, Sendzik, Andrea, Mothes, Robert, Schulz, Stefan E., Zahn, Dietrich R.T., Hietschold, Michael, Lang, Heinrich, Gessner, Thomas
Publikováno v:
Microelectron. Eng. 107, 223-228 (2013). Digital Object Identifier: 10.1016/j.mee.2012.10.026
The following is the accepted manuscript of the original article: Marcel Melzer, Thomas Waechtler, Steve Müller, Holger Fiedler, Sascha Hermann, Raul D. Rodriguez, Alexander Villabona, Andrea Sendzik, Robert Mothes, Stefan E. Schulz, Dietrich R.T. Z
Autor:
Waechtler, Thomas, Ding, Shao-Feng, Hofmann, Lutz, Mothes, Robert, Xie, Qi, Oswald, Steffen, Detavernier, Christophe, Schulz, Stefan E., Qu, Xin-Ping, Lang, Heinrich, Gessner, Thomas
Publikováno v:
Microelectronic Engineering, 88, 2011, 5, S. 684-689, DOI: 10.1016/j.mee.2010.07.004
The deposition of Cu seed layers for electrochemical Cu deposition (ECD) via atomic layer deposition (ALD) of copper oxide and subsequent thermal reduction at temperatures between 110 and 120°C was studied on different diffusion barrier systems. Whi
Publikováno v:
In Inorganica Chimica Acta 1 April 2015 429:227-236
Autor:
Salvan, Georgeta, Robaschik, Peter, Fronk, Michael, Müller, Steve, Waechtler, Thomas, Schulz, Stefan E., Mothes, Robert, Lang, Heinrich, Schubert, Christian, Thomas, Senoy, Albrecht, Manfred, Zahn, Dietrich R.T.
Publikováno v:
In Microelectronic Engineering July 2013 107:130-133
Autor:
Fronk, Michael, Müller, Steve, Waechtler, Thomas, Schulz, Stefan E., Mothes, Robert, Lang, Heinrich, Zahn, Dietrich R.T., Salvan, Georgeta
Publikováno v:
In Thin Solid Films 1 May 2012 520(14):4741-4744