Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Mota Frutuoso, Tadeu"'
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 2023, 70 (3), pp.845
IEEE Transactions on Electron Devices, 2023, 70 (3), pp.845
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c63e3ea2a42272feae1d4ab46ce9b69e
https://hal-cea.archives-ouvertes.fr/cea-04083773
https://hal-cea.archives-ouvertes.fr/cea-04083773
Autor:
Garros, Xavier, Batude, Perrine, Fenouillet-Beranger, Claire, Brunet, Laurent, Calvacante, Camila, Mota Frutuoso, Tadeu, Gassilloud, Remy, Ribotta, Mickael, Brevard, Laurent, Lapras, Valerie, Andrieu, François, Gaillard, Fréd
Publikováno v:
2022 IEEE SYMPOSIUM ON VLSI TECHNOLOGY AND CIRCUITS
2022 IEEE SYMPOSIUM ON VLSI TECHNOLOGY AND CIRCUITS, Jun 2022, Honolulu, United States
2022 IEEE SYMPOSIUM ON VLSI TECHNOLOGY AND CIRCUITS, Jun 2022, Honolulu, United States
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5c9c04e15cdc4a6e589c744796158865
https://cea.hal.science/cea-03740747
https://cea.hal.science/cea-03740747
Autor:
Mota Frutuoso, Tadeu, Garros, Xavier, Lugo-Alvarez, José, Kom Kammeugne, Roméo, Mohgouk Zouknak, Louis David, Viey, Abygaël, Vandendaele, William, Ferrari, Philippe, Gaillard, Fred
Publikováno v:
IEEE International Reliability Physics Symposium (IRPS 2022)
IEEE International Reliability Physics Symposium (IRPS 2022), Mar 2022, Dallas, United States. ⟨10.1109/IRPS48227.2022.9764550⟩
IEEELink
IEEE International Reliability Physics Symposium (IRPS 2022), Mar 2022, Dallas, United States. ⟨10.1109/IRPS48227.2022.9764550⟩
IEEELink
International audience; Two Ultra-Fast capacitance characterization methods based on the displacement current measure are explored for MOS capacitance devices. The first method measure the variation of charge obtained from several 100ns short pulses
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13a5e89e482ad964495f897e131baddb
https://doi.org/10.1109/irps48227.2022.9764550
https://doi.org/10.1109/irps48227.2022.9764550
Autor:
Mota Frutuoso, Tadeu, Lugo-Alvarez, José, Garros, Xavier, Brunet, Laurent, Cassé, Mickaël, Fenouillet-Beranger, Claire, Romano, Giovanni, Januel, Tarcisius, Cooper, David, Loup, Virginie, Kanyandekwe, Joël, Acosta-Alba, Pablo, Kerdiles, Sébastien, Tavernier, Aurélien, Brevard, Laurent, Ferrari, Philippe, Andrieu, François, Gaillard, Frédéric
Publikováno v:
Symposium on VLSI Technology 2021
Symposium on VLSI Technology 2021, Jun 2021, Kyoto, Japan
IEEELink
Symposium on VLSI Technology 2021, Jun 2021, Kyoto, Japan
IEEELink
International audience; Record RF Figure-Of-Merits (FoM) is highlighted for a 42nm NMOS transistor fully processed at Low Thermal Budget (LTB) (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3515::5b0a9ac3b8727fc321cf16de4029c6ae
https://hal.science/hal-04069684
https://hal.science/hal-04069684