Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Mostafa Emam"'
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 4 (2023)
his paper presents a complete study of the impactof mechanical stress on the performance of SOI MOSFETs.This investigation includes dc, analog and RF characteristics.Parameters of a small-signal equivalent circuit are also ex-tracted as a function of
Externí odkaz:
https://doaj.org/article/b790bd925fd043c494606b102a0bb4eb
Publikováno v:
Al-Azhar Assiut Medical Journal, Vol 19, Iss 1, Pp 181-185 (2021)
Background Gestational diabetes mellitus (GDM) may cause fetomaternal complications. GDM can be diagnosed conventionally by an oral glucose tolerance test (OGTT). Glycated hemoglobin (HbA1c) is a marker for the blood glucose level in the previous 2
Autor:
Mostafa Emam, Matthias Gerdts
Publikováno v:
Proceedings of the 8th International Conference on Vehicle Technology and Intelligent Transport Systems.
Publikováno v:
Egyptian Journal of Agricultural Research. 97:265-284
Autor:
Gamal M. K. Mehaisen, N. Fernand, N.A. Ahmed, A.A.A. Azoz, Ahmed Mostafa Emam, Pedro González-Redondo, Sandra Afonso
Publikováno v:
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname
World Rabbit Science, Vol 28, Iss 2, Pp 93-102 (2020)
instname
World Rabbit Science, Vol 28, Iss 2, Pp 93-102 (2020)
Mitochondrial DNA (mtDNA) and cytochrome b (cyt b) gene sequences were used to determine the status of genetic diversity and phylogeny for 132 individuals from local rabbit breeds in Egypt and Spain. The Egyptian local rabbit breeds were Egyptian Red
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8054f1d46b42d494eb84e9bde588582e
http://hdl.handle.net/10251/148724
http://hdl.handle.net/10251/148724
Autor:
Valeriya Kilchytska, Jean-Pierre Raskin, Denis Flandre, Francois Andrieu, Mostafa Emam, M. K. Md Arshad
Publikováno v:
Solid-State Electronics. 97:38-44
This work details the harmful effect of parasitic resistances and capacitances on RF figures of merit (FoM) of ultra-thin body and thin buried oxide (UTBB) FD SOI n-MOSFETs. It is demonstrated that intrinsically, UTBB device can reach very high cut-o
Autor:
Mostafa Emam, Jean-Pierre Raskin
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 61:1496-1504
The design options for low-voltage low-power (LVLP) applications are not limited to the circuit level, but it should start with the right choice of device technology and architecture. This paper presents a comparative study between a special structur
Publikováno v:
ECS Transactions. 35:129-134
A Zero Temperature Coefficient characteristic is presented and characterized for the first time for current gain cutoff frequency and maximum oscillation frequency of different MOSFET structures. The benefits of these points on the design of RF circu
Autor:
C. Sandow, Jean-Pierre Raskin, Qing-Tai Zhao, C. Urban, A. Fox, Mostafa Emam, Siegfried Prof. Dr. Mantl
Publikováno v:
Solid-State Electronics. 54:877-882
In this paper, we present fully-depleted Schottky barrier MOSFETs with dopant-segregated NiSi source and drain junctions. Schottky barrier MOSFETs with a channel length of 80 nm show high on-currents of 900 μA/μm for n-type devices with As segregat
Autor:
Danielle Vanhoenacker-Janvier, Mostafa Emam, Tao Chuan Lim, Franois Danneville, Jean-Pierre Raskin, Paulius Sakalas
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2010, 57, pp.1188-1191. ⟨10.1109/TED.2010.2044286⟩
IEEE Transactions on Electron Devices, 2010, 57, pp.1188-1191. ⟨10.1109/TED.2010.2044286⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2010, 57, pp.1188-1191. ⟨10.1109/TED.2010.2044286⟩
IEEE Transactions on Electron Devices, 2010, 57, pp.1188-1191. ⟨10.1109/TED.2010.2044286⟩
In this brief, it is clearly demonstrated that a two-parameter noise model is sufficient to accurately extract the MOSFET high-frequency noise performance, as long as channel uniformity is ensured (which corresponds to mainstream CMOS technology). Ne