Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Moshegov, N. T."'
Publikováno v:
Phys. Rev. B 59, 7330 (1999)
It is shown that the observed Quantum Hall Effect in epitaxial layers of heavily doped n-type GaAs with thickness (50-140 nm) larger the mean free path of the conduction electrons (15-30 nm) and, therefore, with a three-dimensional single-particle sp
Externí odkaz:
http://arxiv.org/abs/cond-mat/9810224
Autor:
Budantsev, M. V., Kvon, Z. D., Pogosov, A. G., Gusev, G. M., Portal, J. C., Maude, D. K., Moshegov, N. T., Toropov, A. I.
We investigate the transport in a two-dimensional (2D) lattice of coupled Sinai billiards fabricated on the basis of a high-mobility 2D electron gas in GaAs/AlGaAs heterojunction. For the states with low reduced conductivity g<<1 an anomalously weak
Externí odkaz:
http://arxiv.org/abs/cond-mat/9802188
Autor:
Pusep, Yu. A., Silva, M. T. O., Galzerani, J. C., Milekhin, A. G., Moshegov, N. T., Toropov, A. I.
Publikováno v:
Journal of Applied Physics; 5/15/1996, Vol. 79 Issue 10, p8024, 6p, 4 Graphs
Autor:
Haisler, V. A., Govorov, A. O., Kurochkina, T. V., Moshegov, N. T., Stenin, S. I., Toropov, A. I., Shebanin, A. P.
Publikováno v:
Physics of Semiconductors - Proceedings of the 20th International Conference (In 3 Volumes); 1990, p1417-1420, 4p
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2001, Vol. 19 Issue 4, p1529-1535, 7p
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2001, Vol. 19 Issue 4, p1541-1545, 5p
Autor:
Al’perovich, V. L., Tkachenko, B. A., Tkachenko, O. A., Moshegov, N. T., Toropov, A. I., Yaroshevich, A. S.
Publikováno v:
JETP Letters; 7/25/99, Vol. 70 Issue 2, p117, 6p
Publikováno v:
JETP Letters; 7/1/98, Vol. 68 Issue 1, p53, 6p
Autor:
Budantsev, M. V., Kvon, Z. D., Pogosov, A. G., Plotnikov, A. E., Moshegov, N. T., Toropov, A. I.
Publikováno v:
JETP Letters; 3/10/96, Vol. 63 Issue 5, p347, 6p
Publikováno v:
Journal of Crystal Growth; July 2001, Vol. 227 Issue: 1 p1025-1028, 4p