Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Moshe Rozentsvige"'
Autor:
Ofir Montal, Obert Wood, Tom Wallow, Man-Ping Cai, Chris Ngai, Moshe Rozentsvige, Christopher Dennis Bencher, Kfir Dotan, Ido Dolev, Uzodinma Okoroanyanwu, Amiad Conley
Publikováno v:
SPIE Proceedings.
EUV mask metrology and inspection challenges as well as EUV patterned wafer metrology and inspection strategies must be addressed to enable EUV patterning for pilot and high volume production. In this work we present a defectivity analysis of defects
Autor:
Lior Shoval, Gaetano Santoro, Vladislav Kudriashov, Rik Jonckheere, Ran Brikman, Dieter Van den Heuvel, Moshe Rozentsvige, Shmoolik Mangan, Ilan Englard
Publikováno v:
SPIE Proceedings.
While EUV lithography is approaching the pre-production stage, improving mask defectivity is recognized as a top challenge. The accepted strategy for EUV reticle qualification is to use a combination of a dedicated blank inspection (BI) to visualize
Publikováno v:
SPIE Proceedings.
Photomask degradation via haze defect formation is an increasing troublesome yield problem in the semiconductor fab. Wafer inspection is often utilized to detect haze defects due to the fact that it can be a bi-product of process control wafer inspec
Autor:
Dae Jong Kim, Chul-Hong Kim, Hak Kwon Lee, Hyung Won Yoo, Yariv Bustan, Yun Ho Lee, Moshe Rozentsvige, Koon Ho Bae, Shimon Levi, Sung Su Kim, Hedvi Spielberg
Publikováno v:
SPIE Proceedings.
As design rules shrink, Critical Dimension Uniformity (CDU) and Line Edge Roughness (LER) have a dramatic effect on printed final lines and hence the need to control these parameters increases. Sources of CDU and LER variations include scanner auto-f