Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Mosbacker, Howard L."'
Autor:
Mosbacker, Howard L., IV
ZnO has received renewed attention in recent years due its exciting properties as a wide band gap semiconductor. ZnO has several advantages over GaN including the availability of substrates, a room temperature excitonic emission, and an environmental
Externí odkaz:
http://rave.ohiolink.edu/etdc/view?acc_num=osu1204733572
Autor:
Strzhemechny, Yuri M., Mosbacker, Howard L., Goss, Stephen H., Look, David C., Reynolds, Donald C., Litton, Cole W., Garces, Nelson Y., Giles, Nancy C., Halliburton, Larry E., Niki, Shigeru, Brillson, Leonard J.
Publikováno v:
Journal of Electronic Materials; Apr2005, Vol. 34 Issue 4, p399-403, 5p, 6 Graphs
Autor:
Strzhemechny, Yuri M., Mosbacker, Howard L., Look, David C., Reynolds, Donald C., Litton, Cole W., Garces, Nelson Y., Giles, Nancy C., Halliburton, Larry E., Niki, Shigeru, Brillson, Leonard J.
Publikováno v:
Applied Physics Letters; 4/5/2004, Vol. 84 Issue 14, p2545-2547, 3p, 4 Graphs
Autor:
Anwar, Mehdi F., Crowe, Thomas W., Manzur, Tariq, Roedig, Christoph A., Burdette, Don J., Law, Jeremy J., Trichopoulos, Georgios C., Sertel, Kubilay, Mosbacker, Howard L.
Publikováno v:
Proceedings of SPIE; May 2014, Vol. 9102 Issue: 1 p910205-910205-7