Zobrazeno 1 - 10
of 128
pro vyhledávání: '"Morvic, M."'
Autor:
Morvic, M. *, Betko, J.
Publikováno v:
In Sensors & Actuators: A. Physical 2005 120(1):130-133
Publikováno v:
In Journal of Crystal Growth 2003 248:369-374
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 2002 197(3):240-246
Autor:
Betko, J., Morvic, M.
Publikováno v:
Journal of Applied Physics; 12/1/1999, Vol. 86 Issue 11, p6243, 6p, 1 Chart, 8 Graphs
Publikováno v:
ASDAM 2000. Conference Proceedings Third International EuroConference on Advanced Semiconductor Devices & Microsystems (Cat. No.00EX386); 2000, p223-226, 4p
Publikováno v:
Journal of applied physics 88, 5821 (2000).
Highly resistive molecular beam epitaxial GaN layers are characterized by temperature dependent conductivity and Hall effect measurements. Seven n-type GaN samples with room temperature layer resistivity ranging between 8 and 4.2x10(6) Omega cm are u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3364::8fa68c30551d426098f79cdc9b447071
https://juser.fz-juelich.de/record/49881
https://juser.fz-juelich.de/record/49881
Autor:
Konakova, R. V., Tkhorik, Yu. A., Zaitsevskii, I. L., Benč, V., Morvic, M., Kordoš, P., Červenák, J.
Publikováno v:
Crystal Research & Technology; 1983, Vol. 18 Issue 11, p1451-1456, 6p
Publikováno v:
2008 International Conference on Advanced Semiconductor Devices & Microsystems; 2008, p111-114, 4p
Autor:
Morvic, M., Betko, J.
Publikováno v:
Fifth International Conference on Advanced Semiconductor Devices & Microsystems, 2004. ASDAM 2004 (9780780383357); 2004, p263-266, 4p
Publikováno v:
12th International Conference on Semiconducting & Insulating Materials, 2002. SIMC-XII-2002; 2002, p31-34, 4p