Planar Hall effect in Hall sensors made from InP/InGaAs heterostructure

Autor: Morvic, M. ^*, Betko, J.

Publikováno v: In Sensors & Actuators: A. Physical 2005 120(1):130-133

Electrical properties of semi-insulating GaAs irradiated with neutrons

Autor: Morvic, M, Boháček, P, Betko, J, Dubecký, F, Huran, J, Sekáčová, M

Publikováno v: In Nuclear Inst. and Methods in Physics Research, B 2002 197(3):240-246

Conductivity and hall-effect characterization of highly resistive molecular-beam epitaxial GaN layers

Autor: Kordos, P., Morvic, M., Betko, J., van Hove, J. M., Wowchak, A. M., Chow, P. P.

Publikováno v: Journal of applied physics 88, 5821 (2000).

Highly resistive molecular beam epitaxial GaN layers are characterized by temperature dependent conductivity and Hall effect measurements. Seven n-type GaN samples with room temperature layer resistivity ranging between 8 and 4.2x10(6) Omega cm are u

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https://juser.fz-juelich.de/record/49881

Planar hall effect and inagnetoresistance in hall sensors.

Autor: Morvic, M., Betko, J.

Publikováno v: Fifth International Conference on Advanced Semiconductor Devices & Microsystems, 2004. ASDAM 2004 (9780780383357); 2004, p263-266, 4p

On the measurement of high resistance semiconductors by the van der Pauw method.

Autor: Morvic, M.

Publikováno v: ASDAM 2000. Conference Proceedings Third International EuroConference on Advanced Semiconductor Devices & Microsystems (Cat. No.00EX386); 2000, p327-330, 4p