Výsledky vyhledávání - "Morthorst, T. J."

Akademický článek

Observation and electronic characterization of ‘‘new’’ E′ center defects in technologically relevant thermal SiO2 on Si: An additional complexity in oxide charge trapping.

Autor: Conley, John F., Lenahan, P. M., Evans, H. L., Lowry, R. K., Morthorst, T. J.

Publikováno v: Journal of Applied Physics; 9/1/1994, Vol. 76 Issue 5, p2872, 9p, 4 Diagrams, 1 Chart, 7 Graphs

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Akademický článek

Electron-spin-resonance evidence for an impurity-related E’-like hole trapping defect in thermally grown SiO2 on Si.

Autor: Conley, John F., Lenahan, P. M., Evans, H. L., Lowry, R. K., Morthorst, T. J.

Publikováno v: Journal of Applied Physics; 12/15/1994, Vol. 76 Issue 12, p8186, 3p, 2 Graphs

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Conference

Characterization of Two E' Center Charge Traps in Conventionally Grown Thermal SiO2 ON Si.

Autor: Conley, J. F., Lenahan, P.M., Evans, H. L., Lowry, R.K., Morthorst, T. J.

Publikováno v: ESSDERC '94: 24th European Solid State Device Research Conference; 1994, p309-312, 4p

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