Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Morshed, Md Golam"'
Autor:
Morshed, Md Golam, Vakili, Hamed, Sakib, Mohammad Nazmus, Ganguly, Samiran, Stan, Mircea R., Ghosh, Avik W.
We present a novel design of a strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell comprising a piezoelectric/magnet (gating)/topological insulator (TI)/magnet (storage) heterostructure that leverages the TI's
Externí odkaz:
http://arxiv.org/abs/2407.20925
Autor:
Morshed, Md Golam, Rehm, Laura, Shukla, Ankit, Xie, Yunkun, Ganguly, Samiran, Rakheja, Shaloo, Kent, Andrew D., Ghosh, Avik W.
True random number generators (TRNGs) are fundamental building blocks for many applications, such as cryptography, Monte Carlo simulations, neuromorphic computing, and probabilistic computing. While perpendicular magnetic tunnel junctions (pMTJs) bas
Externí odkaz:
http://arxiv.org/abs/2310.18781
Autor:
Rehm, Laura, Morshed, Md Golam, Misra, Shashank, Shukla, Ankit, Rakheja, Shaloo, Pinarbasi, Mustafa, Ghosh, Avik W., Kent, Andrew D.
Nanoscale magnetic tunnel junction (MTJ) devices can efficiently convert thermal energy in the environment into random bitstreams for computational modeling and cryptography. We recently showed that perpendicular MTJs activated by nanosecond pulses c
Externí odkaz:
http://arxiv.org/abs/2310.18779
Autor:
Ma, Chung T., Kittiwatnakul, Salinporn, Sittipongpittaya, Apiprach, Wang, Yuhan, Morshed, Md Golam, Ghosh, Avik W., Poon, S. Joseph
The ability to manipulate spins in magnetic materials is essential in designing spintronics devices. One method for magnetic switching is through strain. In VO2 on TiO2 thin films, while VO2 remains rutile across the metal-insulator transition, the i
Externí odkaz:
http://arxiv.org/abs/2310.17045
Autor:
Shukla, Ankit, Heller, Laura, Morshed, Md Golam, Rehm, Laura, Ghosh, Avik W., Kent, Andrew D., Rakheja, Shaloo
Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic devices, have been used to build true random number generators (TRNGs) with different trade-offs between throughput, power, and area requirements. MTJs with hig
Externí odkaz:
http://arxiv.org/abs/2304.08808
Low energy barrier magnet (LBM) technology has recently been proposed as a candidate for accelerating algorithms based on energy minimization and probabilistic graphs because their physical characteristics have a one-to-one mapping onto the primitive
Externí odkaz:
http://arxiv.org/abs/2302.08074
Publikováno v:
Front. Nanotechnol. 5:1146852 (2023)
Neuromorphic computing, commonly understood as a computing approach built upon neurons, synapses, and their dynamics, as opposed to Boolean gates, is gaining large mindshare due to its direct application in solving current and future computing techno
Externí odkaz:
http://arxiv.org/abs/2302.05056
Publikováno v:
Phys. Rev. Applied 17, 064019 (2022)
Magnetic skyrmions are chiral spin textures with attractive features, such as ultra-small size, solitonic nature, and easy mobility with small electrical currents that make them promising as information-carrying bits in low-power high-density memory,
Externí odkaz:
http://arxiv.org/abs/2110.13445
Autor:
Sultana, Tangina, Hossain, Md. Delowar, Morshed, Md Golam, Afridi, Tariq Habib, Lee, Young-Koo
Publikováno v:
In Information Sciences March 2024 662
Autor:
Vakili, Hamed, Zhou, Wei, Ma, Chung T, Morshed, Md Golam, Sakib, Mohammad Nazmus, Hartnett, Tim, Xu, Jun-Wen, Ganguly, Samiran, Litzius, Kai, Quessab, Yassine, Balachandran, Prasanna, Stan, Mircea, Poon, S J, Kent, Andrew D., Beach, Geoffrey, Ghosh, Avik W.
Publikováno v:
Journal of Applied Physics 130, 070908 (2021)
Solitonic magnetic excitations such as domain walls and, specifically, skyrmionics enable the possibility of compact, high density, ultrafast,all-electronic, low-energy devices, which is the basis for the emerging area of skyrmionics. The topological
Externí odkaz:
http://arxiv.org/abs/2101.09947