Zobrazeno 1 - 10
of 370
pro vyhledávání: '"Morpurgo, Alberto F."'
Superconductivity in few-layer semiconducting transition metal dichalcogenides (TMDs) can be induced by field-effect doping through ionic-liquid gating. While several experimental observations have been collected over the years, a fully-consistent th
Externí odkaz:
http://arxiv.org/abs/2409.11834
Autor:
Cao, Zongzheng, Liao, Menghan, Yan, Hongyi, Zhu, Yuying, Zhang, Liguo, Watanabe, Kenji, Taniguchi, Takashi, Morpurgo, Alberto F., Liu, Haiwen, Xue, Qi-Kun, Zhang, Ding
A conventional superconducting state may be replaced by another dissipationless state hosting Cooper pairs with a finite momentum, leaving thermodynamic footprints for such a phase transition. Recently, a novel type of finite momentum pairing, so-cal
Externí odkaz:
http://arxiv.org/abs/2409.00373
Autor:
Lin, Xiaohanwen, Wu, Fan, Lopéz-Paz, Sara A., von Rohr, Fabian O., Gibertini, Marco, Gutiérrez-Lezama, Ignacio, Morpurgo, Alberto F.
We investigate the c-direction conduction in CrSBr in the linear regime, not accessible in other van der Waals (vdW) magnetic semiconductors, because of the unmeasurably low current. The resistivity -- $10^8$ to $10^{11}$ times larger than in the a-
Externí odkaz:
http://arxiv.org/abs/2401.16931
Autor:
Yao, Fengrui, Multian, Volodymyr, Wang, Zhe, Ubrig, Nicolas, Teyssier, Jérémie, Wu, Fan, Giannini, Enrico, Gibertini, Marco, Gutiérrez-Lezama, Ignacio, Morpurgo, Alberto F.
In twisted two-dimensional (2D) magnets, the stacking dependence of the magnetic exchange interaction can lead to regions of ferromagnetic and antiferromagnetic interlayer order, separated by non-collinear, skyrmion-like spin textures. Recent experim
Externí odkaz:
http://arxiv.org/abs/2308.08355
Autor:
Margot, Florian, Lisi, Simone, Cucchi, Irène, Cappelli, Edoardo, Hunter, Andrew, Gutiérrez-Lezama, Ignacio, Ma, KeYuan, von Rohr, Fabian, Berthod, Christophe, Petocchi, Francesco, Poncé, Samuel, Marzari, Nicola, Gibertini, Marco, Tamai, Anna, Morpurgo, Alberto F., Baumberger, Felix
Publikováno v:
Nano Lett. 2023, 23 6433-6439
Black phosphorus (BP) stands out among two-dimensional (2D) semiconductors because of its high mobility and thickness dependent direct band gap. However, the quasiparticle band structure of ultrathin BP has remained inaccessible to experiment thus fa
Externí odkaz:
http://arxiv.org/abs/2306.00749
Autor:
Wu, Fan, Gibertini, Marco, Watanabe, Kenji, Taniguchi, Takashi, Gutiérrez-Lezama, Ignacio, Ubrig, Nicolas, Morpurgo, Alberto F.
Transistors realized on 2D antiferromagnetic semiconductor CrPS$_4$ exhibit large magnetoconductance, due to magnetic-field-induced changes in magnetic state. The microscopic mechanism coupling conductance and magnetic state is not understood. We ide
Externí odkaz:
http://arxiv.org/abs/2304.12712
Autor:
Cao, Chuanwu, Melegari, Margherita, Philippi, Marc, Domaretskiy, Daniil, Ubrig, Nicolas, Gutiérrez-Lezama, Ignacio, Morpurgo, Alberto F.
Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top-electrolyte gates, which pose experimental constraints and make device fabr
Externí odkaz:
http://arxiv.org/abs/2302.11967
Autor:
Wu, Fan, Gibertini, Marco, Watanabe, Kenji, Taniguchi, Takashi, Gutiérrez-Lezama, Ignacio, Ubrig, Nicolas, Morpurgo, Alberto F.
Publikováno v:
Advanced Materials 2023
Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing transistor oper
Externí odkaz:
http://arxiv.org/abs/2301.10535
Autor:
Sun, Lihuan, Rademaker, Louk, Mauro, Diego, Scarfato, Alessandro, Pásztor, Árpád, Gutiérrez-Lezama, Ignacio, Wang, Zhe, Martinez-Castro, Jose, Morpurgo, Alberto F., Renner, Christoph
Inducing and controlling spin-orbit coupling (SOC) in graphene is key to create topological states of matter, and for the realization of spintronic devices. Placing graphene onto a transition metal dichalcogenide is currently the most successful stra
Externí odkaz:
http://arxiv.org/abs/2212.04926
Autor:
Tenasini, Giulia, Soler-Delgado, David, Wang, Zhe, Yao, Fengrui, Dumcenco, Dumitru, Giannini, Enrico, Watanabe, Kenji, Taniguchi, Takashi, Moulsdale, Christian, Garcia-Ruiz, Aitor, Fal'ko, Vladimir I., Gutiérrez-Lezama, Ignacio, Morpurgo, Alberto F.
Publikováno v:
Nano Lett., 22 (16), 6760-6766 (2022)
We report experimental investigations of transport through bilayer graphene (BLG)/chromium trihalide (CrX$_3$; X=Cl, Br, I) van der Waals interfaces. In all cases, a large charge transfer from BLG to CrX$_3$ takes place (reaching densities in excess
Externí odkaz:
http://arxiv.org/abs/2207.02175