Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Moriya Miyashita"'
Autor:
Kamijo Kazutaka, Fukuda Etsuo, Moriya Miyashita, Tetsuo Endoh, Koji Izunome, Hiroyuki Kageshima, Ishikawa Takashi, Sakamoto Takao
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 15:127-134
Autor:
Kojiro Shimizu, Koji Izunome, Takahiro Maeta, Hiroshi Kubota, Moriya Miyashita, Masaaki Furuta
Publikováno v:
Surface and Interface Analysis. 48:1244-1247
The interface states between Si substrate and the gate oxide (Si/SiO2) have significantly influences to device properties. The conventional measurement methods for interface states need a long turn around time evaluation period since test element gro
Autor:
Hiroyuki Kageshima, Ishikawa Takashi, Koji Izunome, Fukuda Etsuo, Tetsuo Endoh, Sakamoto Takao, Moriya Miyashita, Kamijo Kazutaka
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 16:375-375
Autor:
Moriya Miyashita, Masaaki Furuta, Hiroshi Kubota, Kojiro Shimizu, Takahiro Maeta, Koji Izunome
Publikováno v:
Japanese Journal of Applied Physics. 57:031301
Autor:
Noriyuki Taoka, Hiroaki Matsumoto, Shinichi Takagi, S. H. Jeon, S. Koyama, Koji Izunome, Koji Araki, Mitsuru Takenaka, H. Kakibayasi, K. Nakano, Moriya Miyashita
Publikováno v:
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Autor:
Moriya Miyashita, Yochi Sasaki
Publikováno v:
Inorganica Chimica Acta. 183:15-19
[Mo2(μ-O)2(O)2(R-cys)2]2− (R-cys(R)-cysteinate(2−)) undergoes significant change in circular dichroism (CD) spectra on addition of cationic surfactants such as cetyltrimethylammonium bromide (CTAB), decyltrimethylammonium bromide (DTAB) and c
Publikováno v:
Proceedings of 1994 IEEE International Electron Devices Meeting.
Drastic improvement of a wafer quality has been carried out by high temperature anneal in hydrogen. A thin oxide formed on the hydrogen annealed wafer (HAI) has been found to have excellent behavior. In addition, electrical and physical evaluations v
Autor:
Mitsuru Takenaka, Susumu Koyama, Sung-Ho Jeon, Hiroaki Matsumoto, Shinichi Takagi, Kiyotaka Nakano, Noriyuki Taoka, Koji Araki, Koji Izunome, Hiroshi Kakibayasi, Moriya Miyashita
Publikováno v:
Japanese Journal of Applied Physics. 52:04CC26
The effects of high-temperature Ar/H2 annealing on (110) Si, which is known to provide flat (110) Si surfaces, have been studied from the viewpoint of metal–oxide–semiconductor (MOS) interface roughness and inversion-layer electron mobility limit
Publikováno v:
Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials.
Publikováno v:
Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials.