Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Moritz-Andreas Meyer"'
Autor:
Meike Hauschildt, Ehrenfried Zschech, Martin Gall, Matthias Kraatz, Lijuan Zhang, Rene Huebner, Dieter Schmeisser, Paul S. Ho, Moritz Andreas Meyer
Publikováno v:
International Journal of Materials Research. 101:216-227
Continuous scaling of Cu interconnect structures can significantly impact reliability-limiting processes such as electromigration and stress-induced voiding. Prior to the 65 nm technology node, mass transport under electromigration is dominated by di
Autor:
P. Limbecker, T. Foltyn, Inka Zienert, J. Poppe, C. Zistl, Frank Koschinsky, Frank Feustel, C. Witt, Steffi Thierbach, Oliver Aubel, Holm Geisler, W. Yao, Moritz-Andreas Meyer, H. Schmidt, Hans-Jürgen Engelmann, D. Gehre, Eckhard Langer
Publikováno v:
Microelectronic Engineering. 85:2042-2046
Investigation of stress migration phenomena is one of the key aspects to characterize metallization reliability. Typical test methodologies are investigations of resistance shifts at wafer-level or package-level temperature storage tests under a temp
Autor:
Eckhard Langer, Moritz Andreas Meyer, Pascal Limbecker, Dirk Utess, Axel Preusse, Oliver Aubel, Steffi Thierbach
Publikováno v:
EDFA Technical Articles. 10:24-29
With the introduction of 65 nm technology, the cross-sectional dimensions of copper interconnect in some layers are now smaller than 100 nm, which translates to current densities on the order of several MA/cm2. Electromigration as a root cause for ch
Autor:
Valeriy Sukharev, Subodh Mhaisalkar, Moritz-Andreas Meyer, Ahila Krishnamoorthy, Ehrenfried Zschech, A.V. Vairagar, Hans-Jürgen Engelmann
Publikováno v:
Thin Solid Films. 504:279-283
Electromigration (EM) in sub-micron metal interconnects depends on interface bonding and metal microstructure. The process of EM-induced degradation in on-chip interconnects as observed from both in-situ scanning electron microscopy (SEM) experiments
Autor:
A. V. Vairagar, Ahila Krishnamoorthy, Moritz-Andreas Meyer, Subodh Mhaisalkar, Ehrenfried Zschech
Publikováno v:
Microelectronic Engineering. 82:675-679
Reservoir effect in dual-damascene Cu interconnect structures caused by electromigration was studied by in situ secondary electron microscopy (SEM). Electromigration-induced void nucleation and apparent void movement in opposite direction to electron
Autor:
Volker Kahlert, Ahila Krishnamoorthy, Subodh Mhaisalkar, A. V. Vairagar, King-Ning Tu, Moritz Andreas Meyer, Valeriy Sukharev, Hans Jürgen Engelmann, M. Y. Yan, Ehrenfried Zschech
Publikováno v:
Zeitschrift für Metallkunde. 96:966-971
Both in situ microscopy experiments at embedded inlaid copper interconnect structures and numerical simulations based on a physical model provide information about electromigration-induced degradation mechanisms in on-chip interconnects. It is shown
Publikováno v:
Materials Testing. 46:513-516
In-situ SEM and XRM studies of fully embedded via/line interconnect structures allow imaging of the time-dependent void evolution in inlaid copper interconnects. It is shown that void formation, growth and movement, and consequently degradation, depe
Publikováno v:
Microelectronic Engineering. 64:375-382
An experimental set-up is presented, that allows in situ scanning electron microscope (SEM) investigations of the progress of electromigration damage in fully embedded copper interconnect structures. A LEO Gemini 1550 SEM has been equipped with a hea
Autor:
King-Ning Tu, A. V. Vairagar, Moritz Andreas Meyer, Ehrenfried Zschech, Subodh Mhaisalkar, A. M. Gusak, Ahila Krishnamoorthy
Publikováno v:
Applied Physics Letters. 85:2502-2504
In situ electromigration experiments were carried out to study electromigration-induced failure in the upper and lower layers in dual-damascene Cu test structures. The observations revealed electromigration-induced void movement along the Cu/dielectr
Autor:
Eric A. Stach, Gerd Schneider, B. Bates, Moritz-Andreas Meyer, Erik H. Anderson, Greg Denbeaux, Ehrenfried Zschech, A. Pearson, D. Hambach
Publikováno v:
Applied Physics Letters. 81:2535-2537
Quantitative time-resolved x-ray microscopy mass transport studies of the early stages of electromigration in an inlaid Cu line/via structure were performed with about 40 nm lateral resolution. The image sequences show that void formation is a highly