Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Moritz Brehm"'
Autor:
Andreas Fuchsberger, Lukas Wind, Daniele Nazzari, Alexandra Dobler, Johannes Aberl, Enrique Prado Navarrete, Moritz Brehm, Lilian Vogl, Peter Schweizer, Sebastian Lellig, Xavier Maeder, Masiar Sistani, Walter M. Weber
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 541-547 (2024)
A promising approach to advance electronics beyond static operations is to enhance state-ofthe- art systems by the functional diversification of transistors. Here, we experimentally demonstrate that an ultra-thin Ge channel implemented on a Si on ins
Externí odkaz:
https://doaj.org/article/65488fbb9de04393b83e8d339e62fc90
Autor:
Andreas Fuchsberger, Lukas Wind, Daniele Nazzari, Larissa Kuhberger, Daniel Popp, Johannes Aberl, Enrique Prado Navarrete, Moritz Brehm, Lilian Vogl, Peter Schweizer, Sebastian Lellig, Xavier Maeder, Masiar Sistani, Walter M. Weber
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 83-87 (2024)
Here, we present a Ge based reconfigurable transistor, capable of dynamic run-time switching between n- and p-type operation with enhanced performance compared to state-of-the- art Si devices. Thereto, we have monolithically integrated an ultra-thin
Externí odkaz:
https://doaj.org/article/16ff7e9f84d742d487e8c8349d88f41c
Publikováno v:
APL Materials, Vol 11, Iss 10, Pp 101117-101117-6 (2023)
The thermal stability of GeSn epitaxial thin films was investigated via in situ transmission electron microscopy (TEM). Samples were grown with a similar layer structure and 10 at.% Sn content by either molecular beam epitaxy or chemical vapor deposi
Externí odkaz:
https://doaj.org/article/8f052124738b44e787524a86b762972d
Autor:
Andreas Fuchsberger, Lukas Wind, Masiar Sistani, Raphael Behrle, Daniele Nazzari, Johannes Aberl, Enrique Prado Navarrete, Lada Vukŭsić, Moritz Brehm, Peter Schweizer, Lilian Vogl, Xavier Maeder, Walter M. Weber
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 6, Pp n/a-n/a (2023)
Abstract Reconfigurable field‐effect transistors, capable of being dynamically programmed during run‐time, overcome the static nature of conventional complementary metal‐oxide semiconductors by reducing the transistor count and the circuit path
Externí odkaz:
https://doaj.org/article/fab59ec6009b437d8bb1cb383c08d31f
Autor:
Jeffrey Schuster, Johannes Aberl, Lada Vukušić, Lukas Spindlberger, Heiko Groiss, Thomas Fromherz, Moritz Brehm, Friedrich Schäffler
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-13 (2021)
Abstract The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it challenging
Externí odkaz:
https://doaj.org/article/21603fefc52d4e56b81388c8e6c87d0b
Autor:
Lukas Spindlberger, Johannes Aberl, Antonio Polimeni, Jeffrey Schuster, Julian Hörschläger, Tia Truglas, Heiko Groiss, Friedrich Schäffler, Thomas Fromherz, Moritz Brehm
Publikováno v:
Crystals, Vol 10, Iss 5, p 351 (2020)
While light-emitting nanostructures composed of group-IV materials fulfil the mandatory compatibility with CMOS-fabrication methods, factors such as the structural stability of the nanostructures upon thermal annealing, and the ensuing photoluminesce
Externí odkaz:
https://doaj.org/article/7802e6940b5948c48bc203e3fb67dae7
Autor:
Alexey Minenkov, Natalija Šantić, Tia Truglas, Johannes Aberl, Lada Vukušić, Moritz Brehm, Heiko Groiss
Publikováno v:
MRS Bulletin. 47:359-370
In situ transmission electron microscopy (TEM) is a powerful tool for advanced material characterization. It allows real-time observation of structural evolution at the atomic level while applying different stimuli such as heat. However, the validity
Autor:
Johannes Aberl, Thomas Fromherz, Friedrich Schäffler, Jeffrey Schuster, Lada Vukušić, Moritz Brehm, Heiko Groiss, Lukas Spindlberger
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-13 (2021)
Scientific Reports
Scientific Reports
The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it challenging to achie
Autor:
Lukas, Wind, Masiar, Sistani, Raphael, Böckle, Jürgen, Smoliner, Lada, Vukŭsić, Johannes, Aberl, Moritz, Brehm, Peter, Schweizer, Xavier, Maeder, Johann, Michler, Frank, Fournel, Jean-Michel, Hartmann, Walter M, Weber
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 18(44)
Si
Autor:
Thanavorn Poempool, Johannes Aberl, Marco Clementi, Lukas Spindlberger, Lada Vukušić, Matteo Galli, Dario Gerace, Frank Fournel, Jean-Michel Hartmann, Friedrich Schäffler, Moritz Brehm, Thomas Fromherz
We report the resonantly enhanced radiative emission from a single SiGe quantum dot (QD), which is deterministically embedded into a bichromatic photonic crystal resonator (PhCR) at the position of its largest modal electric field by a scalable metho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58f3aed698407718b3b1cb46ef8781cd