Zobrazeno 1 - 10
of 113
pro vyhledávání: '"Morio Inoue"'
Autor:
Morio Inoue, Takehisa Chuma, Hideki Fujimoto, Terumi Tanaka, Yasuhiro Gunji, Hideki Nishiya, Seiji Uto
Publikováno v:
Journal of the Japan Veterinary Medical Association. 66:138-142
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9508bfdd4811377e6acc9ce3ac7a990
https://doi.org/10.12935/jvma.66.138
https://doi.org/10.12935/jvma.66.138
Publikováno v:
Materials Science in Semiconductor Processing. 3:221-225
Boron ion implantation into pre-amorphized silicon is studied. Pre-amorphization is performed either by F + or Si + implantation prior to B + implantation at 10 keV with 3×10 15 ions/cm 2 . Broadening of the boron profile can be suppressed markedly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ceb4c25a6b42b89308cd58e573bd290
https://doi.org/10.1016/s1369-8001(00)00036-6
https://doi.org/10.1016/s1369-8001(00)00036-6
Autor:
Isao Yamada, Tadashi Kokubo, Morio Inoue, Gikan H. Takaoka, Fumiaki Miyaji, Yasuo Suzuki, Masakazu Kawashita
Publikováno v:
Journal of Non-Crystalline Solids. 255:140-148
Yttrium-containing glass microspheres are already used clinically for radiotherapy of cancers, since the microspheres are activated to β-emitters by neutron bombardment and have a high chemical durability. The microspheres can irradiate cancer direc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a8ecd4c1d2b250f3a95584ca1cbaf20
https://doi.org/10.1016/s0022-3093(99)00377-4
https://doi.org/10.1016/s0022-3093(99)00377-4
Autor:
Ken-ichi Sano, Morio Inoue, Toshinori Takagi, Jun Takada, Masanori Watanabe, Katsuhiro Yokota, Toshinobu Nakao
Publikováno v:
Applied Surface Science. :663-669
We have developed a two-stage deposition technique to fabricate copper–phthalocyanine (Cu–Pc) thin films with good crystallinity and a molecularly flat surface. The Cu–Pc thin films were grown on mica substrates using an ionized cluster beam (I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d90572b85f4c40f5851a0c0e48fec3f
https://doi.org/10.1016/s0169-4332(98)00135-4
https://doi.org/10.1016/s0169-4332(98)00135-4
Autor:
Tohru Hara, Sohtaro Oshima, Kohei Sekine, Morio Inoue, Taira Kitamura, Kenji Kajiyama, Tomoaki Yoneda, Takeo Kihana, Yasuo Kakizaki
Publikováno v:
Journal of The Electrochemical Society. 144:L78-L81
The delamination of thin silicon layers by ion implantation and annealing has been studied in H{sup +} implanted silicon layers. Hydrogen ions are implanted into a (100) p-silicon layer through a 100 nm thick oxide layer at 100 keV with different dos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62de9add62010cc91ab4ac195a5c649e
https://doi.org/10.1149/1.1837559
https://doi.org/10.1149/1.1837559
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 121:1-6
Ion Engineering Center Corp. (IECC) and Ion Engineering Research Institute Corp. (IERIC) established in 1988 in new Kansai Science City in Japan are introduced. Their structure, equipment and R & D activities are described in the view point of the pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59450f2d5b488ac18b4c5539b8e55357
https://doi.org/10.1016/s0168-583x(96)00431-4
https://doi.org/10.1016/s0168-583x(96)00431-4
Autor:
Morio Inoue
Publikováno v:
IEEJ Transactions on Power and Energy. 117:1509-1512
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c0f083aa7dbd2c31fc169794827148c
https://doi.org/10.1541/ieejpes1990.117.12_1509
https://doi.org/10.1541/ieejpes1990.117.12_1509
Publikováno v:
Journal of The Electrochemical Society. 140:2975-2981
Effects of top-oxidation on the reliability of oxide/nitride/oxide (ONO) stacked films have been investigated for different oxidation methods. The leakage current electric field acceleration factor (β) of mean time to failure, and reliability of ONO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a32c9d48b729d34813197da2ec575efa
https://doi.org/10.1149/1.2220942
https://doi.org/10.1149/1.2220942
Autor:
Genshu Fuse, Katsuya Ishikawa, Morio Inoue, Yoshiki Fukuzaki, Takashi Namura, Masakatsu Yoshida, Norishige Aoki
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 74:306-310
Ion implantation charging has been studied by evaluation of the threshold voltage shift (ΔVt) of EEPROM devices. The threshold voltage shifted proportionally with the variation of the electron emission current. This method allows the uniformity of c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dca66fb94468b44b393c9bda7e477b7b
https://doi.org/10.1016/0168-583x(93)95066-e
https://doi.org/10.1016/0168-583x(93)95066-e
Publikováno v:
IEEE Transactions on Electron Devices. 40:2211-2215
A repair technique for shifter defects on phase shifting masks is described. It is based on the spin-coating of silicon-containing resist on the entire mask, electron beam exposure, and development. The new repair technique is quite simple because it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::253676756c29f289314953e0200bcb2d
https://doi.org/10.1109/16.249466
https://doi.org/10.1109/16.249466