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pro vyhledávání: '"Moriarty, G.R."'
Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p +GaAs base layers
Autor:
Moriarty, G.R., Murtagh, M. *, Cherkaoui, K., Gouez, G., Kelly, P.V., Crean, G.M., Bland, S.W.
Publikováno v:
In Materials Science & Engineering B 2001 80(1):284-288
Autor:
Moriarty, G.R., Kildemo, M. *, Beechinor, J.T., Murtagh, M., Kelly, P.V., Crean, G.M., Bland, S.W.
Publikováno v:
In Thin Solid Films 27 March 2000 364(1-2):244-248