Zobrazeno 1 - 10
of 157
pro vyhledávání: '"Morgan E Ware"'
Publikováno v:
Frontiers in Physics, Vol 12 (2024)
A terahertz time domain pulsed spectroscopy system is modified to provide fully polarimetric radiation and analysis. The operation of this polarimetry system is characterized using a birefringent, x-cut quartz crystal. The modification is based on ro
Externí odkaz:
https://doaj.org/article/617fe44f4f574a88b7b1ab262de1f283
Autor:
Mirsaeid Sarollahi, Mohammad Zamani-Alavijeh, Manal A. Aldawsari, Rohith Allaparthi, Md Helal Uddin Maruf, Malak Refaei, Reem Alhelais, Yuriy I. Mazur, Morgan E. Ware
Publikováno v:
Frontiers in Materials, Vol 9 (2022)
The temperature dependence of Λ-graded InGaN solar cells is studied through simulation using nextnano software. Λ-Graded structures have been designed by increasing and then decreasing the indium composition in epitaxial InGaN layers. Due to polari
Externí odkaz:
https://doaj.org/article/0dc73e4de1794e20b3e5b2e55ae1a9f9
Autor:
Inshad Jum’h, Husam H. Abu-Safe, Morgan E. Ware, I. A. Qattan, Ahmad Telfah, Carlos J. Tavares
Publikováno v:
Nanomaterials, Vol 13, Iss 6, p 970 (2023)
Surface atomic arrangement and physical properties of aluminum ultrathin layers on c-Si(111)-7 × 7 and hydrogen-terminated c-Si(111)-1 × 1 surfaces deposited using molecular beam epitaxy were investigated. X-ray photoelectron spectroscopy spectra w
Externí odkaz:
https://doaj.org/article/6b27d223e6bd4fd3927331830cbd2ee1
Publikováno v:
EPH - International Journal of Science And Engineering. 9:9-15
We report here our observance of superconductivity in compounds derived from the quaternary intermetallic superconductor YNi2B2C by partial substitutions for Ni. Other 3d transition metals T Î {Ti, V, Cr, Mn, Fe, Co, Cu, Zn} were used in replacement
Autor:
Qing Yuan, Baolai Liang, Chuan Zhou, Ying Wang, Yingnan Guo, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-9 (2018)
Abstract We investigate the optical properties of InGaAs surface quantum dots (SQDs) in a composite nanostructure with a layer of similarly grown buried quantum dots (BQDs) separated by a thick GaAs spacer, but with varied areal densities of SQDs con
Externí odkaz:
https://doaj.org/article/1a7030e06efc4fc6accc3c26db1ec4c1
Autor:
Jingtao Liu, Shiping Luo, Xiaohui Liu, Ying Wang, Chunsheng Wang, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo, Baolai Liang
Publikováno v:
Crystals, Vol 12, Iss 3, p 319 (2022)
Stacking growth of the InGaAs quantum dots (QDs) on top of a carrier injection layer is a very useful strategy to develop QD devices. This research aims to study the carrier injection effect in hybrid structures with a layer of In0.4Ga0.6As surface q
Externí odkaz:
https://doaj.org/article/c3a8a6e2d8dd4079b8909ac51e956cc3
Autor:
Chen Li, Yurii Maidaniuk, Andrian V. Kuchuk, Yuriy I. Mazur, Mourad Benamara, Morgan E. Ware, Gregory J. Salamo
Publikováno v:
Materials & Design, Vol 190, Iss , Pp - (2020)
In this work, we present the investigation of InN/GaN multiple-quantum-well (MQW) growth by plasma-assisted molecular beam epitaxy using in-situ reflection high-energy electron diffraction (RHEED) to monitor the growth process. The analysis of the RH
Externí odkaz:
https://doaj.org/article/5ce984843fc144559ed1a85875c20fd9
Autor:
Timothy A. Morgan, Justin Rudie, Mohammad Zamani-Alavijeh, Andrian V. Kuchuk, Nazar Orishchin, Fikadu Alema, Andrei Osinsky, Robert Sleezer, Gregory Salamo, Morgan E. Ware
Publikováno v:
ACS Applied Materials & Interfaces. 14:33944-33951
Autor:
Hang Li, Ying Wang, Yingnan Guo, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo, Baolai Liang
Publikováno v:
Applied Physics Letters. 122
Exciton dynamics in a GaAsSb/GaAs quantum well (QW) heterostructure were investigated via both steady state and transient photoluminescence. The measurements at 10 K demonstrated the coexistence of localized excitons (LEs) and free excitons (FEs), wh
Publikováno v:
Gallium Nitride Materials and Devices XVIII.