Zobrazeno 1 - 10
of 181
pro vyhledávání: '"Moreschini L"'
Autor:
Parzyck, C. T., Pennington, C. A., DeBenedetti, W. J. I., Balajka, J., Echeverria, E., Paik, H., Moreschini, L., Faeth, B. D., Hu, C., Nangoi, J. K., Anil, V., Arias, T. A., Hines, M. A., Schlom, D. G., Galdi, A., Shen, K. M., Maxson, J. M.
Publikováno v:
APL Mater. 11, 101125 (2023)
Alkali antimonide semiconductor photocathodes provide a promising platform for the generation of high brightness electron beams, which are necessary for the development of cutting-edge probes including x-ray free electron lasers and ultrafast electro
Externí odkaz:
http://arxiv.org/abs/2305.19553
Autor:
Choi, B. K., Ulstrup, S., Gunasekera, S. M., Kim, J., Lim, S. Y., Moreschini, L., Oh, J. S., Chun, S. -H., Jozwiak, C., Bostwick, A., Rotenberg, E., Cheong, H., Lyo, I. -W., Mucha-Kruczynski, M., Chang, Y. J.
Publikováno v:
ACS Nano 14, 7880 (2020)
Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as thickness-dep
Externí odkaz:
http://arxiv.org/abs/2005.14525
Autor:
Gatti, G., Crepaldi, A., Puppin, M., Tancogne-Dejean, N., Xian, L., Roth, S., Polishchuk, S., Bugnon, Ph., Magrez, A., Berger, H., Frassetto, F., Poletto, L., Moreschini, L., Moser, S., Bostwick, A., Rotenberg, E., Rubio, A., Chergui, M., Grioni, M.
Publikováno v:
Phys. Rev. Lett. 125, 076401 (2020)
In nodal-line semimetals linearly dispersing states form Dirac loops in the reciprocal space, with high degree of electron-hole symmetry and almost-vanishing density of states near the Fermi level. The result is reduced electronic screening and enhan
Externí odkaz:
http://arxiv.org/abs/1912.09673
Autor:
Moreschini, L., Vecchio, I. Lo, Breznay, N. P., Moser, S., Ulstrup, S., Koch, R., Wirjo, J., Jozwiak, C., Kim, K. S., Rotenberg, E., Bostwick, A., Analytis, J. G., Lanzara, A.
Publikováno v:
Phys. Rev. B 96, 161116(R) (2017)
Direct experimental investigations of the low-energy electronic structure of the Na$_2$IrO$_3$ iridate insulator are sparse and draw two conflicting pictures. One relies on flat bands and a clear gap, the other involves dispersive states approaching
Externí odkaz:
http://arxiv.org/abs/1710.11602
Autor:
Nemšák, S., Conti, G., Gray, A. X., Pálsson, G. K., Conlon, C., Eiteneer, D., Keqi, A., Rattanachata, A., Saw, A. Y., Bostwick, A., Moreschini, L., Strocov, V., Kobayashi, M., Stolte, W., Ueda, S., Kobayashi, K., Gloskovskii, A., Drube, W., Jackson, C., Moetakef, P., Janotti, A., Bjaalie, L., Himmetoglu, B., Van de Walle, C. G., Borek, S., Minár, J., Braun, J., Ebert, H., Plucinski, L., Kortright, J. B., de Groot, F. M. F., Schneider, C. M., Balents, L., Stemmer, S., Fadley, C. S.
Publikováno v:
Phys. Rev. B 93, 245103 (2016)
The interfaces between two condensed phases often exhibit emergent physical properties that can lead to new physics and novel device applications, and are the subject of intense study in many disciplines. We here apply novel experimental and theoreti
Externí odkaz:
http://arxiv.org/abs/1508.01832
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Autor:
Crepaldi, A., Cilento, F., Zacchigna, M., Zonno, M., Johannsen, J. C., Tournier-Colletta, C., Moreschini, L., Vobornik, I., Bondino, F., Magnano, E., Berger, H., Magrez, A., Bugnon, Ph., Autés, G., Yazyev, O. V., Grioni, M., Parmigiani, F.
Publikováno v:
Phys. Rev. B 89, 125408, 2014
Bulk Rashba systems BiTeX (X = I, Br, Cl) are emerging as important candidates for developing spintronics devices, because of the coexistence of spin-split bulk and surface states, along with the ambipolar character of the surface charge carriers. Th
Externí odkaz:
http://arxiv.org/abs/1409.5025
Autor:
Moser, S., Moreschini, L., Ebrahimi, A., Piazza, B. Dalla, Isobe, M., Okabe, H., Akimitsu, J., Mazurenko, V. V., Kim, K. S., Bostwick, A., Rotenberg, E., Chang, J., Rønnow, H. M., Grioni, M.
Publikováno v:
New Journal of Physics, 16 013008 (2014)
We report angle-resolved photoemission (ARPES) measurements, density functional and model tight-binding calculations on Ba$_2$IrO$_4$ (Ba-214), an antiferromagnetic ($T_N=230$ K) insulator. Ba-214 does not exhibit the rotational distortion of the IrO
Externí odkaz:
http://arxiv.org/abs/1310.1307
Autor:
Moser, S., Moreschini, L., Jacimovic, J., Barisic, O. S., Berger, H., Magrez, A., Chang, Y. J., Kim, K. S., Bostwick, A., Rotenberg, E., Forro, L., Grioni, M.
Publikováno v:
Phys. Rev. Lett. 110, 196403 (2013)
Oxygen vacancies created in anatase TiO2 by UV photons (80 - 130 eV) provide an effective electron-doping mechanism and induce a hitherto unobserved dispersive metallic state. Angle resolved photoemission (ARPES) reveals that the quasiparticles are l
Externí odkaz:
http://arxiv.org/abs/1303.5640
Autor:
Tournier-Colletta, C., Moreschini, L., Autès, G., Moser, S., Crepaldi, A., Berger, H., Walter, A. L., Kim, K. S., Bostwick, A., Monceau, P., Rotenberg, E., Yazyev, O. V., Grioni, M.
Publikováno v:
Phys. Rev. Lett. 110, 236401 (2013)
We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor
Externí odkaz:
http://arxiv.org/abs/1303.5551