Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Morelhão, Sergio L."'
Autor:
Penacchio, Rafaela F. S., Burns, Nicholas, Estradiote, Maurício B., Torikachvili, Milton S., Kycia, Stefan W., Morelhão, Sérgio L.
Phosphide skutterudites primarily show promise for thermoelectric applications due to their chemical stability at high temperatures and relatively low cost. Ion doping and band gap engineering have been used to enhance their typically poor thermoelec
Externí odkaz:
http://arxiv.org/abs/2402.00824
Autor:
Penacchio, Rafaela F. S., Estradiote, Maurício B., Morelhão, Sérgio L., Fornari, Celso I., Kagerer, Philipp, Dittmar, Marco, Müller, Simon, Reinert, Friedrich
Combinations of advanced X-ray sources and zero-noise detector of enormous dynamic range have significantly increased the opportunity of mapping the reciprocal space of crystal lattices. It is particularly important in the design of new devices based
Externí odkaz:
http://arxiv.org/abs/2210.05427
Autor:
Valério, Adriana, Trindade, Fabiane J., Penacchio, Rafaela F. S., Ramos, Bria C., Damasceno, Sérgio, Estradiote, Maurício B., Rodella, Cristiane B., Ferlauto, André S., Kycia, Stefan W., Morelhão, Sérgio L.
Small-angle X-ray scattering (SAXS) and X-ray diffraction (XRD) techniques are widely used as analytical tools in the optimization and control of nanomaterial synthesis processes. In crystalline nanoparticle systems with size distribution, the discre
Externí odkaz:
http://arxiv.org/abs/2203.00866
Autor:
Penacchio, Rafaela F. S., Fornari, Celso I., Camillo, Yori G., Kagerer, Philipp, Buchberger, Sebastian, Kamp, Martin, Bentmann, Hendrik, Reinert, Friedrich, Morelhao, Sergio L.
Disordered heterostructures stand as a general description for compounds that are part of homologous series such as bismuth chalcogenides. In device engineering, van der Waals epitaxy of these compounds is very promising for applications in spintroni
Externí odkaz:
http://arxiv.org/abs/2109.01914
Autor:
Penacchio, Rafaela F. S., Fornari, Celso I., Camillo, Yori G., Kagerer, Philipp, Buchberger, Sebastian, Kamp, Martin, Bentmann, Hendrik, Reinert, Friedrich, Morelhao, Sergio L.
Synthesis of new materials demands structural analysis tools suited to the particularities of each system. Van der Waals (vdW) materials are fundamental in emerging technologies of spintronics and quantum information processing, in particular topolog
Externí odkaz:
http://arxiv.org/abs/2107.12280
Dynamical diffraction effects always play a role when working with perfect single crystals. The penetration of X-rays respect to the surface normal during diffraction (extinction depth, $1/\sigma_e$) in perfect single crystals does not have a constan
Externí odkaz:
http://arxiv.org/abs/2011.10394
Autor:
Fornari, Celso I., Abramof, Eduardo, Rappl, Paulo H. O., Kycia, Stefan W., Morelhão, Sérgio L.
Bismuth telluride have regained significant attention as a prototype of topological insulator. Thin films of high quality have been investigated as a basic platform for novel spintronic devices. Low mobility of bismuth and high desorption coefficient
Externí odkaz:
http://arxiv.org/abs/2008.02180
Autor:
Morelhao, Sergio L., Kycia, Stefan, Netzke, Samuel, Fornari, Celso I., Rappl, Paulo H. O., Abramof, Eduardo
Epitaxial films of bismuth telluride topological insulators have received increasing attention due to potential applications in spintronic and quantum computation. One of the most important properties of epitaxial films is the presence of interface d
Externí odkaz:
http://arxiv.org/abs/2007.15042
Autor:
Valério, Adriana, Penacchio, Rafaela F. S., Estradiote, Maurício B., Cantarino, Marli R., Garcia, Fernando A., Morelhão, Sérgio L., Rafter, Niamh, Kycia, Stefan W., Calligaris, Guilherme A., Remédios, Cláudio M. R.
Publikováno v:
MRS Communications, 1-7 (2020)
Engineering of thermoelectric materials requires an understanding of thermal conduction by lattice and electronic degrees of freedom. Filled skutterudites denote a large family of materials suitable for thermoelectric applications where reduced latti
Externí odkaz:
http://arxiv.org/abs/2006.12747
Autor:
Valério, Adriana, Morelhão, Sérgio L.
In the supporting information file of the article Controlled Formation and Growth Kinetics of Phase-Pure, Crystalline BiFeO3 Nanoparticles (Crystal Growth & Design 2019), there is a description on how to use Scherrer equation for in situ X-ray diffra
Externí odkaz:
http://arxiv.org/abs/1911.00701