Direct evidence of enhanced Ga interdiffusion in InAs vertically aligned free-standing nanowires

Autor: Gonz'alez, J. C., Malachias, A., de Sousa, J. C., Andrade, R-Ribeiro, Moreira, M. V. B., de Oliveira, A. G.

We present direct evidence of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B. Scanning electron microscopy together with X-ray diffraction measurements in coplanar an

Externí odkaz: http://arxiv.org/abs/0803.1951

GaAs: Si nanowires: critical reduction of the effect of ZB/WZ polytypism on the electronic structure

Autor: Sedrine, N. Ben, Bourgard, J., Teixeira, J. P., Correia, M. R., Leitão, J. P., Ribeiro-Andrade, R., Salomé, P. M. P., Gustafsson, A., Soares, M. R., Moreira, M. V. B., De Oliveira, A. G., González, J. C.

Publikováno v: research@ua; Vol 9 (2018); 52
research@ua; vol. 9 (2018); 52

No abstract available.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=proauaplataf::7e6b02dd989a892f4e80e8e444b7d1e4
https://proa.ua.pt/index.php/researchua/article/view/23059

Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates.

Autor: Falcão, B. P., Leitão, J. P., Correia, M. R., Soares, M. R., Morales, F. M., Mánuel, J. M., Garcia, R., Gustafsson, A., Moreira, M. V. B., de Oliveira, A. G., González, J. C.

Publikováno v: Journal of Applied Physics; Nov2013, Vol. 114 Issue 18, p183508, 12p, 2 Color Photographs, 1 Black and White Photograph, 1 Diagram, 1 Chart, 7 Graphs

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Mg-Doping of (111)B GaAs Thin Films Grown by Molecular Beam Epitaxy.

Autor: Limborço, H., Matinaga, F. M., da Silva, M. I. N., de Melo, O., Viana, E. R., Leitão, J. P., Moreira, M. V. B., Ribeiro, G. M., de Oliveira, A. G., González, J. C.

Publikováno v: Journal of Physical Chemistry C; 5/23/2019, Vol. 123 Issue 20, p12807-12812, 6p