Electrical and optical localisation of leakage current and breakdown point in SiOC:H low-k dielectrics

Autor: Vidal-Dhô, Matthias, Hubert., Q, Gonon., P, Pelissier, B., Moragues., J-M, Fornara., P.

Publikováno v: IEEE International Conference on Microelectronic Test Structures
IEEE International Conference on Microelectronic Test Structures, 2020, Grenoble, France

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::09739141a40f9c24487249e6ca883913
https://hal.univ-grenoble-alpes.fr/hal-02917886

Surface potential determination in metal-oxide-semiconductor capacitors.

Autor: Moragues, J. M., Ciantar, E., Jérisian, R., Sagnes, B., Oualid, J.

Publikováno v: Journal of Applied Physics; 11/1/1994, Vol. 76 Issue 9, p5278, 10p

Relaxation of the space charge created by Fowler–Nordheim injections in metal–oxide–semiconductor capacitors.

Autor: Sagnes, B., Moragues, J. M., Yckache, K., Jérisian, R., Oualid, J., Vuillaume, D.

Publikováno v: Journal of Applied Physics; 11/1/1996, Vol. 80 Issue 9, p5469, 9p, 2 Black and White Photographs, 2 Charts, 9 Graphs

Coupling between the front and back interfaces in the gate-controlled P+PN+diode on silicon-on-insulator

Autor: Moragues, J.-M., Bouzidi, J., Ciantar, E., Jerisian, R., Oualid, J., Cristoloveanu, S.

Publikováno v: Microelectronics Journal; June 1994, Vol. 25 Issue: 4 p307-322, 16p

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