Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Moosung M. Chae"'
Autor:
Vamsi Paruchuri, Juntao Li, Takeshi Nogami, Daniel C. Edelstein, Terry A. Spooner, Stephan A. Cohen, Theodorus E. Standaert, Moosung M. Chae, James J. Kelly, Terence Kane, Donald F. Canaperi, Elbert E. Huang, Benjamin D. Briggs, Raghuveer R. Patlolla, Deepika Priyadarshini, Sevim Korkmaz, Paul S. McLaughlin, Christopher Parks, Christopher J. Penny, Anita Madan, Xunyuan Zhang, Hosadurga Shobha, Wei Wang, Son Nguyen, Thomas M. Shaw
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
Through-Co self-forming-barrier (tCoSFB) metallization scheme is introduced, with Cu gap-fill capability down to 7 nm-node dimensions. Mn atoms from doped-seedlayer diffuse through CVD-Co wetting layer, to form TaMn O barrier, with integrity proven b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f55e6617005625c40a3affb699b4b476
https://doi.org/10.1109/iedm.2015.7409651
https://doi.org/10.1109/iedm.2015.7409651
Autor:
James J. Kelly, Terry A. Spooner, C.-K. Hu, X. Zhang, Motoyama Koichi, A. Simon, Raghuveer R. Patlolla, Oscar van der Straten, Hosadurga Shobha, Ming He, James Chingwei Li, Timothy M. Shaw, Kunaljeet Tanwar, Daniel C. Edelstein, Takeshi Nogami, Stephan A. Cohen, Moosung M. Chae, Elbert E. Huang, X. Lin, Griselda Bonilla, S. H. Chen, Christopher J. Penny
Publikováno v:
IEEE International Interconnect Technology Conference.
In order to maximize Cu volume and reduce via resistance, barrier thickness reduction is a strong option. Alternative barriers for next-generation BEOL were evaluated in terms of barrier performance to O 2 and Cu diffusion, and effects on reliability
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::818cfbb973a824603c3322facc72f165
https://doi.org/10.1109/iitc.2014.6831875
https://doi.org/10.1109/iitc.2014.6831875