Zobrazeno 1 - 10
of 14 738
pro vyhledávání: '"Moore,David"'
Autor:
Siegel, Benjamin, Afek, Gadi, Lowe, Cecily, Wang, Jiaxiang, Tseng, Yu-Han, Penny, T. W., Moore, David C.
Levitated optomechanical systems are rapidly becoming leading tools for precision sensing of forces and accelerations acting on particles in the femtogram to nanogram mass range. These systems enable a high level of control over the sensor's center-o
Externí odkaz:
http://arxiv.org/abs/2412.07088
Autor:
He, Yunfei, Moore, David C., Wang, Yubo, Ware, Spencer, Ma, Sizhe, Pradhan, Dhiren K., Hu, Zekun, Du, Xingyu, Kennedy, W. Joshua, Glavin, Nicholas R., Olsson III, Roy H., Jariwala, Deep
Ferroelectric (FE)-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we fabricated and characterized metal ferroelectric semiconductor capacitors inte
Externí odkaz:
http://arxiv.org/abs/2411.16652
Autor:
Miskin, Kumar, Cao, Yi, Marland, Madaline, Rwaka, Jay, Shaikh, Farhan, Moore, David, Marohn, John, Clancy, Paulette
Self-regulation of free charge carriers in perovskites via Schottky defect formation has been posited as the origin of the well-known defect tolerance of metal halide perovskite materials that are promising candidates for photovoltaic applications, l
Externí odkaz:
http://arxiv.org/abs/2405.13213
Autor:
Pradhan, Dhiren K., Moore, David C., Francis, A. Matt, Kupernik, Jacob, Kennedy, W. Joshua, Glavin, Nicholas R., Olsson III, Roy H., Jariwala, Deep
Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and mainstrea
Externí odkaz:
http://arxiv.org/abs/2404.03510