Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Moore, Wyatt"'
Autor:
Kalarickal, Nidhin Kurian, Feng, Zixuan, Bhuiyan, A F M Anhar Uddin, Xia, Zhanbo, McGlone, Joe F., Moore, Wyatt, Arehart, Aaron R., Ringel, Steven A., Zhao, Hongping, Rajan, Siddharth
The performance of ultra-wide band gap materials like $\beta$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate dielectrics
Externí odkaz:
http://arxiv.org/abs/2006.02349
Autor:
Feng, Zixuan, Bhuiyan, A F M Anhar Uddin, Xia, Zhanbo, Moore, Wyatt, Chen, Zhaoying, McGlone, Joe F., Daughton, David R., Arehart, Aaron R., Ringel, Steven A., Rajan, Siddharth, Zhao, Hongping
A new record-high room temperature electron Hall mobility (${\mu}_{RT} = 194\space cm^{2}/V\space s$ at $n\sim 8\times 10^{15}\space cm^{-3}$) for ${\beta}$-Ga2O3 is demonstrated in the unintentionally doped thin film grown on (010) semi-insulating s
Externí odkaz:
http://arxiv.org/abs/2004.13089
Autor:
Xia, Zhanbo, Chandrasekar, Hareesh, Moore, Wyatt, Wang, Caiyu, Lee, Aidan, McGlone, Joe, Kalarickal, Nidhin Kurian, Arehart, Aaron, Ringel, Steven, Yang, Fengyuan, Rajan, Siddharth
Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics. In materi
Externí odkaz:
http://arxiv.org/abs/1911.02068
Autor:
Kalarickal, Nidhin Kurian, Xia, Zhanbo, Mcglone, Joe, Liu, Yumo, Moore, Wyatt, Arehart, Aaron, Ringel, Steve, Rajan, Siddharth
We report on the design and demonstration of ${\beta}-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doped heterostructures to achieve high sheet charge density. The use of a thin spacer layer between the Si delta-doping and heterojunction interface w
Externí odkaz:
http://arxiv.org/abs/1910.11521
Autor:
Kalarickal, Nidhin Kurian, Xia, Zhanbo, McGlone, Joe, Krishnamoorthy, Sriram, Moore, Wyatt, Brenner, Mark, Arehart, Aaron R., Ringel, Steven A., Rajan, Siddharth
We report on the origin of high Si flux observed during the use of Si as a doping source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass spectroscopy (SIMS) analysis that Si flux is not limited by the vapor
Externí odkaz:
http://arxiv.org/abs/1908.01101
Autor:
Kalarickal, Nidhin Kurian, Xia, Zhanbo, McGlone, Joe F., Liu, Yumo, Moore, Wyatt, Arehart, Aaron R., Ringel, Steven A., Rajan, Siddharth
Publikováno v:
Journal of Applied Physics; 6/7/2020, Vol. 127 Issue 21, p1-7, 7p, 1 Diagram, 2 Charts, 4 Graphs
Autor:
Bertsch, Andy, Saeed, Mohammad, Ondracek, James, Abdullah, ABM, Pizzo, Josh, Dahl, Jordan, Scheschuk, Shain, Moore, Wyatt, Youngren, Danny
Publikováno v:
Journal of Leadership in Organizations; Vol 4, No 1 (2022): Journal of Leadership in Organizations
Introduction/Main Objectives: This study investigated preferred leadership styles across Baby Boomers, Generation X, and Millennials. The autocratic, participative, and laissez-faire were identified as the most prevalent styles; and were assessed to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c38b87a3e514b03df3e29b12c77888d
https://doi.org/10.22146/jlo.70057
https://doi.org/10.22146/jlo.70057
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