Restricted Channel Migration in 2D Multilayer ReS2

Autor: Yeeun Kim, Youkyung Seo, Christoforos G. Theodorou, Chul Min Kim, Byung-Chul Lee, Yeonsu Kim, Min-Kyu Joo, Doyoon Kim, Moonsoo Sung, Gyu Tae Kim, Soo Yeon Kim

Publikováno v: ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2021, 13 (16), pp.19016-19022. ⟨10.1021/acsami.1c02111⟩

When thickness-dependent carrier mobility is coupled with Thomas-Fermi screening and interlayer resistance effects in two-dimensional (2D) multilayer materials, a conducting channel migrates from the bottom surface to the top surface under electrosta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5140e3bf2d4b587c85aa2d6c71a85848
https://doi.org/10.1021/acsami.1c02111

Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET

Autor: Kookjin Lee, Jun-hee Choi, Jungu Chun, Jae Woo Lee, Moonsoo Sung, Gyu Tae Kim, Yeonsu Kim, So Jeong Park, Doyoon Kim, Min-Kyu Joo, Hyunjin Ji, Sung-Jin Choi, Dae-Young Jeon, Yongwoo Lee, Young-Hoon Cho, Hyebin Lee

Publikováno v: Nanotechnology. 32(16)

Through time-dependent defect spectroscopy and low-frequency noise measurements, we investigate and characterize the differences of carrier trapping processes occurred by different interfaces (top/sidewall) of the gate-all-around silicon nanosheet fi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1257033d40a852f8c7ec8a9316e3d3c
https://pubmed.ncbi.nlm.nih.gov/33302263

A 32-Gb MLC NAND Flash Memory With Vth Endurance Enhancing Schemes in 32 nm CMOS

Autor: Taeho Jeon, Yujong Noh, Heejoung Park, Won-Sun Park, Chang-Hyuk Lee, Yo-Hwan Koh, In-Suk Yun, Chul-Woo Yang, Jinhaeng Lee, Moonsoo Sung, Sunghoon Ahn, Joong-Seob Yang, Yongdeok Cho, Hyunjong Jin, Sanghwan Kim, Jooyun Ha, Jeawon Choi, Chae-Kyu Jang, Sanghwa Chung, Byoung-In Joo, Jee-Yul Kim, Jeakwan Kwon, Sok-Kyu Lee, Jeong Byoung Kwan, Dae-Il Choi

Publikováno v: IEEE Journal of Solid-State Circuits. 46:97-106

Novel program and read schemes are presented to break barriers in scaling of NAND flash memory such as threshold voltage endurance from floating gate interference, and charge loss tolerance. To enhance threshold voltage endurance and charge loss tole

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::938db36a446a2369975e9808164fb78f
https://doi.org/10.1109/jssc.2010.2084450

A 32Gb MLC NAND-flash memory with Vth-endurance-enhancing schemes in 32nm CMOS

Autor: Jinhaeng Lee, Sanghwan Kim, Chang-Hyuk Lee, Chae-Kyu Jang, Taeho Jeon, Dae-Il Choi, Yujong Noh, Jee-Yul Kim, Sok-Kyu Lee, Chul-Woo Yang, Yo-Hwan Koh, In-Suk Yun, Sunghoon Ahn, Hyunjong Jin, Byoung-In Joo, Jae-Kwan Kwon, Joong-Seob Yang, Jeawon Choi, Jooyun Ha, Won-Sun Park, Moonsoo Sung, Sanghwa Chung, Jeong Byoung Kwan, Yongdeok Cho

Publikováno v: ISSCC

As NAND flash memory market grows rapidly in various application such as USB devices, MP3 players, SSD, cellular phone, cameras, there is a strong requirement of high density and low cost devices. Two different approaches studied to meet these requir

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fd8b878763855ffe3fb91eb71979b77e
https://doi.org/10.1109/isscc.2010.5433932

Suggestion for optimal location of textile-based ECG electrodes on an elastic shirts considering clothing pressure of the shirt

Autor: Keesam Jeong, Moonsoo Sung, Gilsoo Cho

Publikováno v: ISWC

For an effective design of ECG shirt, clothing pressure in each point with a shirt composed of 60% polyester, 33% cotton, and 7% Lycra was measured, and the qualities of ECG signals with the textile-based electrodes on the shirts according to contact

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8bc59d64294462fa0cca34ed793de942
https://doi.org/10.1109/iswc.2008.4911603