Zobrazeno 1 - 10
of 117
pro vyhledávání: '"Moonju Cho"'
Autor:
Eun Namgung, Sun U. Kwon, Moon‐Ku Han, Gyeong‐Moon Kim, Hahn Young Kim, Kwang‐Yeol Park, Moonju Cho, Ha‐Gyun Choi, Hyun‐Wook Nah, Hyun Taek Lim, Dong‐Wha Kang
Publikováno v:
Brain and Behavior, Vol 14, Iss 5, Pp n/a-n/a (2024)
Abstract Introduction Visual field defects (VFDs) represent a debilitating poststroke complication, characterized by unseen parts of the visual field. Visual perceptual learning (VPL), involving repetitive visual training in blind visual fields, may
Externí odkaz:
https://doaj.org/article/7fa6588797a84e679be9bc050fbd74ed
Autor:
Soyeon Lee, Moonju Cho
Publikováno v:
The Journal of Play Therapy. 25:1-16
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6344b8cf838a379dae3bb577ec9d4421
https://doi.org/10.32821/jpt.25.1.1
https://doi.org/10.32821/jpt.25.1.1
Publikováno v:
Journal of Electroceramics. 40:293-299
All-solid-state battery performance is strongly dependent on effective charge transfer at both 1) the interface of the active particles and 2) through the interstitial regions of composite cathode. Design of the composite cathode is further complicat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::706cdca24706f439a469998a01c467bc
https://doi.org/10.1007/s10832-018-0129-y
https://doi.org/10.1007/s10832-018-0129-y
Autor:
Tom Schram, Romain Ritzenthaler, S. A. Chew, Y. Son, Johan Albert, K. B. Noh, Aaron Thean, Naoto Horiguchi, Alessio Spessot, Eddy Simoen, Christian Caillat, Moonju Cho, Pierre C. Fazan, Jerome Mitard, Anda Mocuta, Marc Aoulaiche
Publikováno v:
IEEE Transactions on Electron Devices. 63:265-271
In this paper, a new scheme called diffusion and gate replacement (D&GR) metal-inserted polysilicon integration is demonstrated. The CMOS flow allows controlling the gate height asymmetry between the nMOS and the pMOS by driving the work function shi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b0ea76f0c76fc2064594f2ae1b9b173
https://doi.org/10.1109/ted.2015.2501721
https://doi.org/10.1109/ted.2015.2501721
Autor:
Maria Toledano-Luque, Praveen Raghavan, Pieter Weckx, Moonju Cho, Guido Groeseneken, Sebastien Morrison, Doyoung Jang, Marie Garcia Bardon, Kenichi Miyaguchi, Rudy Lauwereins, Jacopo Franco, Halil Kukner, Francky Catthoor, Ben Kaczer, Liesbet Van der Perre
Publikováno v:
Microprocessors and Microsystems. 39:1039-1051
Negative Bias Temperature Instability (NBTI) is one of the major time-dependent degradation mechanisms that impact the reliability of advanced deeply scaled CMOS technologies. NBTI can cause workload-dependent shifts on a transistor's threshold volta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9beec29dbac6252a18a857dfd4d67203
https://doi.org/10.1016/j.micpro.2015.06.008
https://doi.org/10.1016/j.micpro.2015.06.008
Autor:
Eddy Simoen, Chao Zhao, Nadine Collaert, Anabela Veloso, Aaron Thean, Cor Claeys, Moonju Cho, Jun Luo, Tianchun Ye, Wen Fang
Publikováno v:
IEEE Electron Device Letters. 37:363-365
The impact of the effective work function (EWF) gate metal on the low-frequency noise behavior of n-type gate-all-around nanowire (NW) FETs has been investigated. A clear reduction of the noise power spectral density has been observed for n-type TiAl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9ad56bbec685a201c2725a004321919
https://doi.org/10.1109/led.2016.2530849
https://doi.org/10.1109/led.2016.2530849
Publikováno v:
2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC).
Lithium-ion secondary batteries have been generally used as promising power sources for hybrid electric vehicles due to their high energy density. Conventional liquid organic electrolytes have a number of inherent limitations and drawbacks. Solvent o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::860116ea6522f8f172e70fb94996eac3
https://doi.org/10.1109/nmdc.2017.8350517
https://doi.org/10.1109/nmdc.2017.8350517
Autor:
Antonio Fiore, Philippe Roussel, Rita Rooyackers, Dimitri Linten, Jacopo Franco, Nadine Collaert, Sebastiano Strangio, Moonju Cho, Felice Crupi
In this paper, we investigate the single defect discharge events in Ge-source n-type vertical nanowire tunnel field effect transistors, by monitoring the relaxation phase which follows bias temperature instability (BTI) stress. Threshold voltage shif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47f2d4ff20dbcda18aaa03e40a07bfcb
http://hdl.handle.net/11568/999947
http://hdl.handle.net/11568/999947
Autor:
Alain Bravaix, Pierre C. Fazan, Pieter Blomme, Guido Groeseneken, Christian Caillat, Eddy Simoen, Malgorzata Jurczak, Liesbeth Witters, Marc Aoulaiche, Moonju Cho
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 2014, 61 (3), pp.801-805. ⟨10.1109/TED.2014.2301913⟩
IEEE Transactions on Electron Devices, 2014, 61 (3), pp.801-805. ⟨10.1109/TED.2014.2301913⟩
International audience; Endurance is investigated on one transistor floating body RAM cells processed on a silicon-on-insulator substrate with ultrathin buried oxide, and programmed using the bipolar junction transistor current inherent in MOSFETs. D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07a1902913381a8a175c2a1b939f84a1
https://doi.org/10.1109/ted.2014.2301913
https://doi.org/10.1109/ted.2014.2301913
Autor:
Thomas Kauerauf, Guillaume Boccardi, Hiroaki Arimura, Ben Kaczer, Jae Woo Lee, Anabela Veloso, Guido Groeseneken, Lars-Ake Ragnarsson, Moonju Cho, Naoto Horiguchi
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 14:408-412
Channel hot-carrier (CHC) reliability in p-FinFET devices is studied related to the postdeposition anneal (PDA) process. Clearly reduced CHC degradation is observed with N2-PDA at the VG = VD stress condition. The interface defect density degradation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6c4f30982276e6362f6fd26a2f34d80
https://doi.org/10.1109/tdmr.2013.2284794
https://doi.org/10.1109/tdmr.2013.2284794