Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Moonjae Kwon"'
Publikováno v:
Surface and Coatings Technology. 288:163-170
The electrodeposition of Zn–Ni alloy coatings containing less than 11% Ni was performed in a sulfuric acid bath. We investigated the influence of the Ni content in the electrodeposit on the corrosion behavior of the alloy in detail, focusing mainly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e01d7f3fc596c17628a22e4919e6b10d
https://doi.org/10.1016/j.surfcoat.2016.01.027
https://doi.org/10.1016/j.surfcoat.2016.01.027
Development of High Functional Black Resin Coated Electrogalvanized Steel Sheet for Digital TV Panel
Autor:
Jong-Sang Kim, Jae-Ryung Lee, Hyeon-Soop Han, Kwangsoo Lim, Moonjae Kwon, Jo Du-Hwan, Hee-Seung Kang, Myoung-Rae Cho, Jae-Hwa Lee, Yong-Gyun Jung, Pan-Woo Seon, Min-Hwan Jung, Soo-Hyoun Cho, Yon-Kyun Song, Hwon-Woo Jeong, Byoung-Chon Cho, Yeong-Bong Cho
Publikováno v:
Corrosion Science and Technology. 12:1-6
Galvanizing Department, POSCO Kwangyang Works, Kwangyang, Korea(Received November 20, 2012; Revised January 11, 2013; Accepted January 15, 2013)Recently Digital TV industry has drastically been moving the illuminating system, which causes an obvious
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bee3f824d83d8aad3925f0ae81608d14
https://doi.org/10.14773/cst.2013.12.1.001
https://doi.org/10.14773/cst.2013.12.1.001
Autor:
Moonjae Kwon, Hokyung Park, Minseok Jo, Hyejung Choi, Seungjae Jung, Man Chang, Musarrat Hasan, Sangmoo Choi, Hyunsang Hwang
Publikováno v:
Microelectronic Engineering. 84:2002-2005
Effects of high-pressure wet vapor annealing (HPWA) on the memory properties of Metal/Alumina/Nitride/Oxide/Silicon (MANOS)-type flash memory devices are studied. The Oxide/Nitride/Alumina (ONA) stacks were annealed in a high-pressure wet vapor ambie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c2a43a23e50400bb5cf1d7e58d891c9
https://doi.org/10.1016/j.mee.2007.04.034
https://doi.org/10.1016/j.mee.2007.04.034
Autor:
Seungjae Jung, Moonjae Kwon, J. Lee, Hyejung Choi, Hokyung Park, Man Chang, Hyunsang Hwang, Musarrat Hasan
Publikováno v:
2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop.
Hybrid charge trapping layer consisting of TaN nanocrystals (NCs) and silicon nitride (SiN) has been fabricated and characterized for silicon-oxide-nitride-oxide-silicon (SONOS) type nonvolatile memory device. After annealing at 900degC, TaN NCs with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0e68160a349eef02b2a5416de40786b
https://doi.org/10.1109/nvsmw.2007.4290586
https://doi.org/10.1109/nvsmw.2007.4290586
Autor:
Hyejung Choi, Moonjae Kwon, Hyunsang Hwang, Hokyung Park, Musarrat Hasan, J. Lee, Seungjae Jung, Man Chang, Sangmoo Choi
Publikováno v:
Applied Physics Letters. 91:052905
TaN nanocrystals (NCs) embedded in silicon nitride were investigated as a new charge-trapping layer of a silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. After annealing at 900°C, TaN NCs with average size of 3.5nm were formed by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0afd7a886c456c6f7b4a577ac8f26a60
https://doi.org/10.1063/1.2760181
https://doi.org/10.1063/1.2760181
Publikováno v:
Applied Physics Letters. 90:193512
A nonvolatile nanocrystal (NC) memory containing a ferritin core was fabricated. A ferritin monolayer was formed through a droplet evaporation technique. High-pressure hydrogen (HP-H2) annealing effectively reduced iron oxide (Fe2O3) to form conducti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e89ce62c9c0aca7d5bc6a34c69b84c8
https://doi.org/10.1063/1.2737362
https://doi.org/10.1063/1.2737362
Autor:
Seungyeol Oh, Rui Dong, Minseok Jo, Wenfeng Xiang, Daeseok Lee, Musarrat Hasan, Moonjae Kwon, Hyejung Choi, Man Chang, Dong-jun Seong, Hyunsang Hwang, Sungho Heo
Publikováno v:
Applied Physics Letters. 90:182118
Materials showing reversible resistance switching between high-resistance state and low-resistance state at room temperature are attractive for today’s semiconductor technology. In this letter, the improvement of reproducible hysteresis and resisti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94f45a30295ea2ac4b5366d8e9c501de
https://doi.org/10.1063/1.2736268
https://doi.org/10.1063/1.2736268
Autor:
Hyejung Choi, Rui Dong, S. N. Seo, Musarrat Hasan, Daeseok Lee, Seungyeol Oh, Wenfeng Xiang, M. B. Pyun, Dong-jun Seong, Hyunsang Hwang, Sungho Heo, Moonjae Kwon
Publikováno v:
Applied Physics Letters. 90:042107
Materials showing reversible resistance switching between high-resistance state and low-resistance state at room temperature are attractive for today’s semiconductor technology. In this letter, the reproducible hysteresis and resistive switching ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbd6d11be7e7c42c8da47395f282be92
https://doi.org/10.1063/1.2436720
https://doi.org/10.1063/1.2436720
Autor:
Hyejung Choi, Seung-Jae Jung, Hokyung Park, Joon-Myung Lee, Moonjae Kwon, Man Chang, Hasan, M., Hyunsang Hwang
Publikováno v:
2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop; 2007, p73-74, 2p