Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Moon-Shik Kang"'
Autor:
Moon-shik Kang
Publikováno v:
The Study of Korean History of Thoughts. 73:187-225
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f69cb488d76937122261a1722903f2f1
https://doi.org/10.31309/skht.73.202304.6
https://doi.org/10.31309/skht.73.202304.6
Autor:
Moon-shik Kang
Publikováno v:
THE CHOSON DYNASTY HISTORY ASSOCIATION. 100:115-156
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3127f5ad9a326d706f264992ef97d4c0
https://doi.org/10.21568/cdha.2022.03.100.115
https://doi.org/10.21568/cdha.2022.03.100.115
Autor:
Moon-shik Kang
Publikováno v:
Journal of Korean Classical Chinese Literature. 37:1-32
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::958a4c2aa8e961917978ca88cc62cfaa
https://doi.org/10.18213/jkccl.2018.37.1.001
https://doi.org/10.18213/jkccl.2018.37.1.001
Autor:
Muhammad Atif Khan, Anh Tuan Duong, Dongsuk Lim, Sunglae Cho, Servin Rathi, Anh Tuan Pham, Sun Jin Yun, Moon-Shik Kang, Jin Woo Park, Lijun Li, Inyeal Lee, Gil-Ho Kim, Yoontae Lee
Publikováno v:
Journal of Nanoscience and Nanotechnology. 18:4243-4247
We demonstrate a high-performance photodetector with multilayer tin diselenide (SnSe2) exfoliated from a high-quality crystal which was synthesized by the temperature gradient growth method. This SnSe2 photodetector exhibits high photoresponsivity of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c60c6aaa883271a2964731bc6d88c40b
https://doi.org/10.1166/jnn.2018.15189
https://doi.org/10.1166/jnn.2018.15189
Tunable electrical properties of multilayer HfSe2field effect transistors by oxygen plasma treatment
Autor:
Yoontae Lee, Servin Rathi, Muhammad Atif Khan, Gil-Ho Kim, Dongsuk Lim, Doo-Hyeb Youn, Chung-sam Jun, Sun Jin Yun, Lijun Li, Moon-Shik Kang, Inyeal Lee, Jin Woo Park
Publikováno v:
Nanoscale. 9:1645-1652
HfSe2 field effect transistors are systematically studied in order to selectively tune their electrical properties by optimizing layer thickness and oxygen plasma treatment. The optimized plasma-treated HfSe2 field effect transistors showed a high on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::252aa2a23c6cf6edcddc1fcbe6bac3d5
https://doi.org/10.1039/c6nr08467b
https://doi.org/10.1039/c6nr08467b
Autor:
Muhammad Atif Khan, Yoontae Lee, Servin Rathi, Inyeal Lee, Gil-Ho Kim, Dongsuk Lim, Neha Rathi, Moon-Shik Kang, Jianwei Wang
Publikováno v:
RSC Advances. 6:23961-23967
We functionalized two-dimensional few-layer MoS2 based FET with graphene oxide (GO) in order to improve its persistent photoconductivity and photoresponse time. Both pristine and GO functionalized devices show n-type semiconductor behavior with high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f371f6af7e23840ab36f9c1fac3eb59f
https://doi.org/10.1039/c6ra03436e
https://doi.org/10.1039/c6ra03436e
Autor:
Inyeal Lee, Dongsuk Lim, Seongsu Kim, Sang-Woo Kim, Servin Rathi, Gil-Ho Kim, Yoontae Lee, Sukwon Choi, Moon-Shik Kang, Serhan Yamacli, Sun Jin Yun, Han Ik Joh
Publikováno v:
Scientific Reports
Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
The fractions of various functional groups in graphene oxide (GO) are directly related to its electrical and chemical properties and can be controlled by various reduction methods like thermal, chemical and optical. However, a method with sufficient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6fe5500bdec3812ba1111056a8b1fcc0
https://pubmed.ncbi.nlm.nih.gov/29739956
https://pubmed.ncbi.nlm.nih.gov/29739956
Autor:
Yoontae Lee, E. S. Kannan, Muhammad Atif Khan, Lijun Li, Servin Rathi, Gil-Ho Kim, Inyeal Lee, Jin Woo Park, Moon-Shik Kang, Dongsuk Lim
Publikováno v:
Nanotechnology. 27(22)
We investigated the n-type doping effect of hydrazine on the electrical characteristics of a molybdenum disulphide (MoS2)-based field-effect transistor (FET). The threshold voltage of the MoS2 FET shifted towards more negative values (from -20 to -70
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87e36e2469303dc72c46f1f144c71732
https://pubmed.ncbi.nlm.nih.gov/27098430
https://pubmed.ncbi.nlm.nih.gov/27098430
Autor:
Moon-shik Kang
Publikováno v:
Korean Studies Quarterly. 35:7-34
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5bfac6d2f5b97ed61ace024af88c091
https://doi.org/10.25024/ksq.35.1.201203.7
https://doi.org/10.25024/ksq.35.1.201203.7
Autor:
Takashi Taniguchi, Yuichi Ochiai, Lijun Li, Gil-Ho Kim, Dongsuk Lim, Kenji Watanabe, Inyeal Lee, Nobuyuki Aoki, Moon-Shik Kang
Publikováno v:
Nanotechnology. 26(29)
We have fabricated a bilayer molybdenum disulphide (MoS2) transistor on boron nitride (BN) substrate and performed Raman spectroscopy and electrical measurements with this device. The characteristic Raman peaks show an upshift about 2.5 cm(-1) with t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ecfcf66b603e705155135cfb5a81be5c
https://pubmed.ncbi.nlm.nih.gov/26136152
https://pubmed.ncbi.nlm.nih.gov/26136152