Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Moon-Hyung Jang"'
Autor:
Can Li, Lili Han, Hao Jiang, Moon-Hyung Jang, Peng Lin, Qing Wu, Mark Barnell, J. Joshua Yang, Huolin L. Xin, Qiangfei Xia
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-9 (2017)
Memristors are key structural units of complex memory and computing systems, yet most currently available memristors are based on materials that are not compatible with silicon technology. Here, the authors demonstrate a CMOS-compatible, self-rectify
Externí odkaz:
https://doaj.org/article/f7d60c24e1cb47bd8dce7c9e1b65c5b2
Publikováno v:
IEEE Journal of Solid-State Circuits. 56:1761-1771
This article presents a low-power audio continuous-time delta-sigma modulator (CTDSM) that employs a chopped negative-R and a tri-level finite impulse-response (FIR) DAC. The noise of the first opamp is mitigated by using a negative-R at the virtual
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f0af4173961d4a6be1c3ae54acb1c63
https://doi.org/10.1109/jssc.2020.3032152
https://doi.org/10.1109/jssc.2020.3032152
Publikováno v:
ACS omega. 7(46)
A novel contact-separation triboelectric generator concept is proposed in this study, which is composed of a double-sided tape with acrylic adhesive material and a metalized polyester (PET/Al) film (an aluminum layer coating on one side). The propose
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67ac872ba259a5320380a9fc54d631b7
https://pubmed.ncbi.nlm.nih.gov/36440170
https://pubmed.ncbi.nlm.nih.gov/36440170
Autor:
Jong Hyun Ahn, Yeowool Huh, Sanggeon Park, Taejune Jeon, Jejung Kim, Moon-Hyung Jang, Changuk Lee, Jeongsik Lim, Youngcheol Chae
Publikováno v:
IEEE Journal of Solid-State Circuits. 55:2889-2901
This article presents a Gm-C-based continuous-time delta–sigma modulator (CTDSM) for artifact-tolerant neural recording interfaces. We propose the feedback-assisted Gm linearization technique, which is applied to the first Gm-C integrator by using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8f4d7098b6f7a423963a3eebbdf6c32
https://doi.org/10.1109/jssc.2020.3018478
https://doi.org/10.1109/jssc.2020.3018478
Publikováno v:
IEEE Journal of Solid-State Circuits. 54:277-287
The opamp in the integrators of a continuous-time delta-sigma modulator (CTDSM) has stringent noise and linearity requirements, which lead to large power dissipation. In this paper, a negative-R assisted integrator is proposed to mitigate the opamp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5358ea76bba2b96388023d406069825
https://doi.org/10.1109/jssc.2018.2871111
https://doi.org/10.1109/jssc.2018.2871111
Publikováno v:
CICC
An active network with the property that the impedance on a terminal pair is negative is called as a negative impedance, and many active circuits, such as amplifiers, filters and oscillators, contain the negative impedance. In particular, a negative
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::427ca105f9ef83a456e96675c34cf3de
https://doi.org/10.1109/cicc51472.2021.9431568
https://doi.org/10.1109/cicc51472.2021.9431568
Autor:
Moon-Hyung Jang, Seungwoo Song, Changuk Lee, Yunhong Kim, Youngcheol Chae, Sung-Sik Park, Sangwoo Lee
Publikováno v:
ISSCC
The amplifiers used to improve the noise performance in analog front-ends and ADCs must have sufficiently low noise and high linearity to achieve overall system performance targets. Achieving the target noise level requires a certain amount of power,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f0049d4996cd5209b6cf0bf8b3f9cdc
https://doi.org/10.1109/isscc19947.2020.9062982
https://doi.org/10.1109/isscc19947.2020.9062982
Publikováno v:
ISSCC
Audio applications require a high-resolution ADC with a dynamic range (DR) of more than 100dB. A continuous-time delta-sigma modulator (CTDSM) is widely used to realize such ADCs and requires high energy efficiency for battery-powered devices [1-5].
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b60680b1a728cf44e5d5043807465d7
https://doi.org/10.1109/isscc19947.2020.9062904
https://doi.org/10.1109/isscc19947.2020.9062904
Publikováno v:
The Journal of chemical physics. 152(2)
Pt-Pd bimetallic nanoparticles were synthesized on TiO2 support on the planar substrate as well as on high surface area SiO2 gel by atomic layer deposition to identify the catalytic performance improvement after the formation of Pt-Pd bimetallic nano
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62d6d4474c867ce2f96178cd2f751818
https://pubmed.ncbi.nlm.nih.gov/31941318
https://pubmed.ncbi.nlm.nih.gov/31941318
Autor:
Qiangfei Xia, Qing Wu, Peng Lin, Huolin L. Xin, Hao Jiang, Jianhua Yang, Lili Han, Can Li, Mark Barnell, Moon-Hyung Jang
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-9 (2017)
Li, Can; Han, Lili; Jiang, Hao; Jang, Moon-Hyung; Lin, Peng; Wu, Qing; et al.(2017). Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors.. Nature communications, 8, 15666. doi: 10.1038/ncomms15666. UC Irvine: Retrieved from: http://www.escholarship.org/uc/item/13c365f5
Li, Can; Han, Lili; Jiang, Hao; Jang, Moon-Hyung; Lin, Peng; Wu, Qing; et al.(2017). Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors.. Nature communications, 8, 15666. doi: 10.1038/ncomms15666. UC Irvine: Retrieved from: http://www.escholarship.org/uc/item/13c365f5
Memristors are promising building blocks for the next-generation memory and neuromorphic computing systems. Most memristors use materials that are incompatible with the silicon dominant complementary metal-oxide-semiconductor technology, and require
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0bdace68c77e5cc1f9e4e1b702dfd2d
https://doaj.org/article/f7d60c24e1cb47bd8dce7c9e1b65c5b2
https://doaj.org/article/f7d60c24e1cb47bd8dce7c9e1b65c5b2