Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Moon-Hae Son"'
Autor:
Keum-Yong Kim, Ejaz Haq, Kye-Hyun Kyung, Kinam Kim, Bok-Moon Kang, Moon-Hae Son, Chang-Hyun Kim, Hyung-Kyu Lim, Soo-In Cho, K. H. Lee, Jai-Hoon Sim, Sang-Bo Lee, Jae-Gwan Park, Jong-Woo Park, Jung-Hwa Lee, Seung-Moon Yoo, Jei-Hwan Yoo, Joungho Kim, Jinman Han, Byung-sik Moon, Kang-yoon Lee, Kyu-Chan Lee
Publikováno v:
IEEE Journal of Solid-State Circuits. 31:1635-1644
This paper describes a 32-bank 1 Gb DRAM achieving 1 Gbyte/s (500 Mb/s/DQ pin) data bandwidth and the access time from RAS of 31 ns at V/sub cc/=2.0 V and 25/spl deg/C. The chip employs (1) a merged multibank architecture to minimize die area; (2) an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe8f35bf377499dd5f1a434eea274fb8
https://doi.org/10.1109/jssc.1996.542308
https://doi.org/10.1109/jssc.1996.542308
Autor:
Jong-Woo Park, Chang-Hyun Kim, Jinman Han, Kang-yoon Lee, Jei-Hwan Yoo, Byung-sik Moon, Moon-Hae Son, Joungho Kim, Jae Gwan Park, Ejaz Haq, Keum-Yong Kim, Seung-Moon Yoo, Soo-In Cho, K. H. Lee, Jai-Hoon Sim, Hyung-Kyu Lim, Kinam Kim, Bok-Moon Kang, Jung Hwa Lee, Sang-Bo Lee, Kye-Hyun Kyung, Kyu Chan Lee
Publikováno v:
1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.
This 32-bank 1 Gb DRAM features: (1) a merged bank architecture (MBA) that results in only 3% die area penalty for 32-bank operation; (2) a source-synchronous I/O interface (SSI) that achieves 1 GB/s bandwidth with low power consumption; (3) flexible
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f593412634f85f7b9aef089242aa32d
https://doi.org/10.1109/isscc.1996.488725
https://doi.org/10.1109/isscc.1996.488725
Autor:
Jei-Hwan Yoo, Chang-Hyun Kim, Kyu-Chan Lee, Kye-Hyun Kyung, Seung-Moon Yoo, Jung-Hwa Lee, Moon-Hae Son, Jin-Man Han, Bok-Moon Kang, Ejaz Haq, Sang-Bo Lee, Jai-Hoon Sim, Joung-Ho Kim, Byung-Sik Moon, Keum-Yong Kim, Jae-Gwan Park, Kyu-Phil Lee, Kang-Yoon Lee, Ki-Nam Kim, Soo-In Cho
Publikováno v:
IEEE Journal of Solid-State Circuits; 1996, Vol. 31 Issue 11, p1635-1644, 10p
Autor:
Jei-Hwan Yoo, Chang Hyun Kim, Kyu Chan Lee, Kye-Hyun Kyung, Seung-Moon Yoo, Jung Hwa Lee, Moon-Hae Son, Jin-Man Han, Bok-Moon Kang, Ejaz Haq, Sang-Bo Lee, Jai-Hoon Sim, Joung-Ho Kim, Byung-Sik Moon, Keum-Yong Kim, Jae Gwan Park, Kyu-Phil Lee, Kang-Yoon Lee, Ki-Nam Kim, Soo-In Cho
Publikováno v:
1996 IEEE International Solid-State Circuits Conference Digest of TEchnical Papers, ISSCC; 1996, p378-379, 2p
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