Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Moo Sup Lim"'
Autor:
Taesub Jung, Changkeun Lee, Sungyoung Seo, Yong Hun Kwon, Yi-tae Kim, Young-Chan Kim, Hyunsurk Ryu, S.L. Cho, Min-Sun Keel, Sae-Young Kim, Chang-Rok Moon, Joonseok Kim, Young-Gu Jin, Sung-Ho Choi, Moo-Sup Lim
Publikováno v:
Electronic Imaging. 32:103-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::664a1d2c685742a914c5a7b5acb6af35
https://doi.org/10.2352/issn.2470-1173.2020.7.iss-103
https://doi.org/10.2352/issn.2470-1173.2020.7.iss-103
Publikováno v:
IEEE Transactions on Electron Devices. 48:161-165
We have fabricated a new lateral field emitter array, in-situ vacuum-sealed, which exhibits a low turn on voltage and a high transconductance value without any additional vacuum sealing process. The vacuum-sealed lateral FEA (VLFEA) is encapsulated d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe125e7336175611a1ee04c05c683176
https://doi.org/10.1109/16.892184
https://doi.org/10.1109/16.892184
Publikováno v:
Physica Scripta. :181-184
Effects of the drift region doping on the device characteristics in SOI BMFET are investigated by two-dimensional device simulation. The simulation results show that higher blocking capability with RESURF principle, larger current gain in high drain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adeb859342162bd19a757270415fcb18
https://doi.org/10.1088/0031-8949/1997/t69/035
https://doi.org/10.1088/0031-8949/1997/t69/035
Autor:
Tae Chan Kim, Yong Jei Lee, Hae Kyung Kong, Han Soo Lee, Jung Chak Ahn, Moo Sup Lim, Seoung Hyun Kim, Dong-ki Min, Kwang Hyuk Bae, Min Seok Oh, Goto Hiroshige, Soo Bang Kim, Sung Kwan Kim, Kyung-Il Kim
Publikováno v:
NEWCAS
This paper presents a BSI(backside-illumination) 14µm-pixel QVGA CMOS image sensor SOC(System On a Chip) measuring TOF(Time-Of-Flight) by 20MHz-intensity modulation of 850nm-wavelength light. The 34% of overall QE(Quantum Efficiency) at 850nm-wavele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9de4353e292365ffd8bfa05cabbdfd7
https://doi.org/10.1109/newcas.2012.6329022
https://doi.org/10.1109/newcas.2012.6329022
Autor:
Duck-Hyung Lee, Taehun Lee, Yun-Ki Lee, Byung-Jun Park, Wook Lee, Jung-Chak Ahn, Yong Hee Lee, Chang-Rok Moon, Kyung-Ho Lee, Jin-hak Kim, Jaeryung Yoo, Moo-Sup Lim, Yong Jei Lee, Tae-Chan Kim, Hyunwoo Cho, Kyoung-Sik Moon, Junghoon Jung, Bum-Suk Kim, Sang-il Jung, Heemin Park, Yi-tae Kim, June-Taeg Lee
Publikováno v:
2008 IEEE International Electron Devices Meeting.
As pixel size of image sensors shrinks down rapidly, we are reaching technical barrier to get the required low light performance. In this paper, recent advanced technologies such as backside illumination, new color filter array, low F-number with ext
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ca4878c75cd64d747aa9651de8a2b77
https://doi.org/10.1109/iedm.2008.4796671
https://doi.org/10.1109/iedm.2008.4796671
Publikováno v:
International Electron Devices Meeting. Technical Digest.
We have designed and fabricated a novel lateral field emitter triode, which is in-situ vacuum encapsulated so that any troublesome additional vacuum sealing process is not required. The device exhibits low turn-on voltage of 7 V, stable current densi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60cdf080a56780d7ab70d5a86a06a679
https://doi.org/10.1109/iedm.1996.553590
https://doi.org/10.1109/iedm.1996.553590
Publikováno v:
Eleventh International Vacuum Microelectronics Conference. IVMC'98 (Cat. No.98TH8382).
In the field emitter arrays (FEAs), the stability of field emission current is an important issue to practical applications. There are many researches to improve the stability and uniformity of field emission current using the active devices such as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef82b76e9d509ae27bdfd92c13023e79
https://doi.org/10.1109/ivmc.1998.728667
https://doi.org/10.1109/ivmc.1998.728667
Publikováno v:
Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).
A new trench-gate CB-BRT, which employs the trench gate structure in order to increase the maximum controllable current (MCC) by reducing the channel resistance, is proposed and fabricated. The experimental results show that the MCC of the trench gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69c0c4cb37028c3054479254a96082c6
https://doi.org/10.1109/ispsd.2001.934591
https://doi.org/10.1109/ispsd.2001.934591
Publikováno v:
MRS Proceedings. 621
In this paper, we propose concentric circular lateral field emitter structure which is more sstable in fabricating and maintaining vacuum conditions. The new FEAs have concentric circular shape while our previous FEAs are stripe type. The anode is fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ef1e3815d63428ff51434d9d59f4b04
https://doi.org/10.1557/proc-621-r5.3.1
https://doi.org/10.1557/proc-621-r5.3.1
Publikováno v:
MRS Proceedings. 558
Lateral FEAs which have three terminals, stable anode current, and suppressed gate current are proposed and fabricated. In order to eliminate the path of electrons between tips and anode, the proposed FEAs are sealed by evaporation of oxide while Mol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb2e2ba9ddce508bb18bc40cc3f77288
https://doi.org/10.1557/proc-558-143
https://doi.org/10.1557/proc-558-143