Zobrazeno 1 - 10
of 270
pro vyhledávání: '"Montserrat Nafria"'
Autor:
Marc Porti, Gerard Palau, Albert Crespo-Yepes, August Arnal Rus, Simon Ogier, Eloi Ramon, Montserrat Nafria
Publikováno v:
Micromachines, Vol 15, Iss 4, p 443 (2024)
Given the current maturity of printed technologies, Organic Thin-Film Transistors (OTFT) still show high initial variability, which can be beneficial for its exploitation in security applications. In this work, the process-related variability and agi
Externí odkaz:
https://doaj.org/article/f135aef7506f4cc9b817766e580d436c
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 55-62 (2018)
Power consumption and Ion/Ioff ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and c
Externí odkaz:
https://doaj.org/article/4e78f865fc984c76896d2761118b0be1
Autor:
Montserrat Nafria, Nadine Collaert
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 953-954 (2018)
The papers in this special section were presented at the 2017 European Solid-State Device Research Conference (ESSDERC).
Externí odkaz:
https://doaj.org/article/021b8ef3204f428d95cbef7741c308a7
Publikováno v:
IEEE Transactions on Nanotechnology. 22:28-35
Autor:
Javier Martin-Martinez, Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Rosana Rodriguez, Rafael Castro-Lopez, Elisenda Roca, Francisco V. Fernandez, Montserrat Nafria
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Autor:
Pablo Saraza-Canflanca, Rafael Castro-Lopez, Elisenda Roca, Javier Martin-Martinez, Rosana Rodriguez, Montserrat Nafria, Francisco V. Fernandez
Random Telegraph Noise is a time-dependent variability phenomenon that has gained increased attention during the last years, especially in deeply-scaled technologies. In particular, there is a wide variety of works presenting different techniques des
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fec16418b46a3d3ce3448070dc5623eb
http://hdl.handle.net/10261/287738
http://hdl.handle.net/10261/287738
Autor:
Emili Salvador, Rosana Rodriguez, Javier Martin-Martinez, Albert Crespo-Yepes, Enrique Miranda, Montserrat Nafria, Antonio Rubio, Vasileios Ntinas, Georgios Ch. Sirakoulis
© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e64f493bef24dfad1647d2560aa240b0
https://hdl.handle.net/2117/381472
https://hdl.handle.net/2117/381472
Autor:
R. Rodriguez, Javier Martin-Martinez, Mireia Bargallo Gonzalez, M. Pedro, Francesca Campabadal, Montserrat Nafria
Publikováno v:
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Digital.CSIC. Repositorio Institucional del CSIC
instname
Universitat Autònoma de Barcelona
Digital.CSIC. Repositorio Institucional del CSIC
instname
In this work, an automatic and flexible measurement setup, which allows a massive electrical characterization of single RRAM devices with pulsed voltages, is presented. The evaluation of the G-V maps under single-pulse test-schemes is introduced as a
Autor:
Albert Crespo-Yepes, Javier Martin-Martinez, Enrique Barajas, Xavier Aragones, R. Rodriguez, Montserrat Nafria, Diego Mateo
Publikováno v:
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Universitat Autònoma de Barcelona
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da062c0c83c73c1ee31b5e773b93cfdc
https://hdl.handle.net/2117/343811
https://hdl.handle.net/2117/343811