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Autor:
Montenegro, Alexandra Fonseca, Baan, Marzieh, Ghazisaeidi, Maryam, Grassman, Tyler J., Myers, Roberto C.
Scanning electron microscopy (SEM) based electron channeling contrast imaging (ECCI) is used to observe and quantify misfit dislocation (MD) networks formed at the heteroepitaxial interface between ZnS and GaP grown by molecular beam epitaxy (MBE). B
Externí odkaz:
http://arxiv.org/abs/2404.16714