Zobrazeno 1 - 10
of 1 670
pro vyhledávání: '"Montanari, M"'
Autor:
Miglior, F., author, Pinotti, L., author, Boyle, L., author, Kenny, D., author, Lee, M., author, De Marchi, M., author, Cadavez, V.A.P., author, Millet, S., author, Evans, R., author, Veldkamp, T., author, Pastell, M., author, Pollott, G., author, Spoolder, H., author, Arango, S., author, Montanari, M., author, Guzzo, N., author, Bailoni, L., author
Publikováno v:
Book of Abstracts of the 73rd Annual Meeting of the European Federation of Animal Science. :443-443
Autor:
Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., De Seta, M.
Publikováno v:
Phys. Rev. Applied 13, 044062 (2020)
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional atomic lands
Externí odkaz:
http://arxiv.org/abs/2002.00851
Autor:
Montanari, M., Virgilio, M., Manganelli, C. L., Zaumseil, P., Zoellner, M. H., Hou, Y., Schubert, M. A., Persichetti, L., Di Gaspare, L., De Seta, M., Vitiello, E., Bonera, E., Pezzoli, F., Capellini, G.
Publikováno v:
Phys. Rev. B 98, 195310 (2018)
In this paper we investigate the structural and optical properties of few strain-unbalanced multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded substrates. The obtained high epitaxial quality demonstrates that strain symmetr
Externí odkaz:
http://arxiv.org/abs/1811.08665
Publikováno v:
Macromolecular Symposia; Jun2024, Vol. 413 Issue 3, p1-4, 4p
Autor:
Giannella L, Delli Carpini G, Di Giuseppe J, Bogani G, Gardella B, Monti E, Liverani CA, Ghelardi A, Insinga S, Montanari M, Raspagliesi F, Spinillo A, Vercellini P, Roncella E, Ciavattini A
Publikováno v:
Infection and Drug Resistance, Vol Volume 14, Pp 3763-3771 (2021)
Luca Giannella,1 Giovanni Delli Carpini,1 Jacopo Di Giuseppe,1 Giorgio Bogani,2 Barbara Gardella,3 Ermelinda Monti,4 Carlo Antonio Liverani,4 Alessandro Ghelardi,5 Salvatore Insinga,1 Michele Montanari,1 Francesco Raspagliesi,2 Arsenio Spinillo,3 Pao
Externí odkaz:
https://doaj.org/article/0993d1febc0d47829f1082b8ae93e21a
Autor:
Sola F, Canonico B, Montanari M, Volpe A, Barattini C, Pellegrino C, Cesarini E, Guescini M, Battistelli M, Ortolani C, Ventola A, Papa S
Publikováno v:
Nanotechnology, Science and Applications, Vol Volume 14, Pp 29-48 (2021)
Federica Sola,1,2 Barbara Canonico,1 Mariele Montanari,1 Angela Volpe,2 Chiara Barattini,1,2 Chiara Pellegrino,2 Erica Cesarini,1 Michele Guescini,1 Michela Battistelli,1 Claudio Ortolani,1 Alfredo Ventola,2 Stefano Papa1 1Department of Biomolecular
Externí odkaz:
https://doaj.org/article/79536f0d35b74c6eaee1765589e826a6
Autor:
Monfredo, M., Mistretta, R., di Salemi, P.O., Zecca, E., Cartoni, C., Brunetti, G.A., Tassinari, D., Drudi, F., Rizzi, F., Pizzuto, M., Formaglio, F., Luzi, M., Narducci, F., Boscolo, G., Mangiapia, M., Artioli, F., Lazzari, M., Dauri, M., Diodati, M., Cupaiolo, A., Mameli, S., Preti, P., Ferrari, P., Vasini, G., Roy, M.T., Piva, L., Nardi, L.F., Montanari, L., Reina, V., Fusco, F., Orsi, L., Molinari, E., Corli, O. *, Floriani, I., Roberto, A., Montanari, M., Galli, F., Greco, M.T., Caraceni, A., Kaasa, S., Dragani, T.A., Azzarello, G., Luzzani, M., Cavanna, L., Bandieri, E., Gamucci, T., Lipari, G., Di Gregorio, R., Valenti, D., Reale, C., Pavesi, L., Iorno, V., Crispino, C., Pacchioni, M., Apolone, G.
Publikováno v:
In Annals of Oncology June 2016 27(6):1107-1115
Autor:
Parenti, S., Casagrande, G., Montanari, M., Espahbodinia, M., Ettari, R., Grande, A., Corsi, L.
Publikováno v:
In Life Sciences 1 May 2016 152:117-125
Autor:
Talamas Simola, E, Montanari, M, Corley-Wiciak, C, Di Gaspare, L, Persichetti, L, Zöllner, Mh, Schubert, Ma, Venanzi, T, Trouche, Mc, Ortolani, M, Mattioli, F, Sfuncia, G, Nicotra, G, Capellini, G, Virgilio, M, De Seta, M
The fabrication of complex low-dimensional quantum devices requires the control of the heteroepitaxial growth at the subnanometer scale. This is particularly challenging when the total thickness of stacked layers of device-active material becomes ext
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::bceec2d3d83dace458de198facfa74fa
https://hdl.handle.net/11590/427089
https://hdl.handle.net/11590/427089