Zobrazeno 1 - 10
of 597
pro vyhledávání: '"Montalenti, F."'
Autor:
Fantasia, A., Rovaris, F., Abou El Kheir, O., Marzegalli, A., Lanzoni, D., Pessina, L., Xiao, P., Zhou, C., Li, L., Henkelman, G., Scalise, E., Montalenti, F.
Publikováno v:
Journal of Chemical Physics; 7/7/2024, Vol. 161 Issue 1, p1-11, 11p
Autor:
Scalise, E., Sarikov, A., Barbisan, L., Marzegalli, A., Migas, D. B., Montalenti, F., Miglio, L.
The metastable hexagonal-diamond phase of Si and Ge (and of SiGe alloys) displays superior optical properties with respect to the cubic-diamond one. The latter is the most stable and popular one: growing hexagonal-diamond Si or Ge without working at
Externí odkaz:
http://arxiv.org/abs/2009.13630
Autor:
Scalise, E., Sarikov, A., Barbisan, L., Marzegalli, A., Migas, D.B., Montalenti, F., Miglio, L.
Publikováno v:
In Applied Surface Science 15 April 2021 545
Autor:
Vanacore, G. M., Chaigneau, M., Barrett, N., Bollani, M., Boioli, F., Salvalaglio, M., Montalenti, F., Manini, N., Caramella, L., Biagioni, P., Chrastina, D., Isella, G., Renault, O., Zani, M., Sordan, R., Onida, G., Ossikovski, R., Drouhin, H. -J., Tagliaferri, A.
Publikováno v:
Physical Review B 88, 115309 (2013)
Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile strain avoidi
Externí odkaz:
http://arxiv.org/abs/1306.1412
Autor:
Becker, L., Storck, P., Schulz, T., Zoellner, M. H., Di Gaspare, L., Rovaris, F., Marzegalli, A., Montalenti, F., De Seta, M., Capellini, G., Schwalb, G., Schroeder, T., Albrecht, M.
Publikováno v:
Journal of Applied Physics; 12/7/2020, Vol. 128 Issue 21, p1-9, 9p
Akademický článek
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Publikováno v:
Nanoscale Research Letters, Vol 5, Iss 12, Pp 1873-1877 (2010)
Abstract We investigate ordered nucleation of Ge islands on pit-patterned Si(001) using an original hybrid Kinetic Monte Carlo model. The method allows us to explore long time-scale evolution while using large simulation cells. We analyze the possibi
Externí odkaz:
https://doaj.org/article/7f2a87b4ba794dfe8063bce8f4e36153
Controlling the density of dislocations and their spatial distribution in semiconductor heterostructures is an important ingredient of microelectronics device design. Computer simulations can greatly help to shed light on the complex behavior of such
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::d2eb8f674e7eed1d34d99d1d59941701
http://hdl.handle.net/10281/329812
http://hdl.handle.net/10281/329812