Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Monroy Aguirre, A."'
Autor:
Julio Cesar Monroy Aguirre
Publikováno v:
38th IAHR World Congress - "Water: Connecting the World".
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::428c40b69450f12cedf8301099d197c6
https://doi.org/10.3850/38wc092019-1532
https://doi.org/10.3850/38wc092019-1532
Autor:
Bertrand Szelag, D. Muller, C. Rossato, F. Judong, Alexandre Giry, F. Blanchet, O. Noblanc, A. Monroy Aguirre, Raphaël Sommet, Denis Pache
Publikováno v:
IEEE Transactions on Electron Devices. 54:861-868
The optimization of the small and large signal performances of a radio frequency (RF)-LDMOS is presented via the achievement of a novel LDMOS architecture. Specific process steps are introduced into a 0.25-mum BiCMOS technology and precisely describe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a97399fc2dce77d9aba868e74bd18894
https://doi.org/10.1109/ted.2007.892355
https://doi.org/10.1109/ted.2007.892355
Autor:
P. Mazoyer, Laurent Duraffourg, A. Monroy-Aguirre, T. Magis, Mylene Savoye, Gregory Arndt, Julien Arcamone, Eric Ollier, Pascal Ancey, M. Laurens, Philippe Robert, Eric Colinet, C. Marcoux, J. Philippe
Publikováno v:
2012 International Electron Devices Meeting.
This work constitutes the first demonstration of monolithic integration of single-crystal silicon capacitive NEMS resonators with CMOS. With this approach, the efficiency of the electrical detection of the NEMS motion is outstanding and achieved with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4828a4d2af3467f9ac1e6f143477b862
https://doi.org/10.1109/iedm.2012.6479048
https://doi.org/10.1109/iedm.2012.6479048
Autor:
Muller, D., Giry, A., Judong, F., Rossato, C., Blanchet, F., Szelag, B., Monroy Aguirre, A., Sommet, Raphaël, Pache, D., Noblanc, O.
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2007, 54, pp.861-868
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2007, 54, pp.861-868
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5a4c0331e36fc23f0b1d225182e33663
https://hal.archives-ouvertes.fr/hal-00198576
https://hal.archives-ouvertes.fr/hal-00198576
Autor:
Monroy Aguirre, Julieta, Mariana Saraí, Quintana Chimal, Blanca Cecilia, López Ramírez, Moreno Francisco, Chable, Sánchez Rico, Luis Ramón
Publikováno v:
Congreso Internacional de Investigacion Academia Journals; 2017, Vol. 9 Issue 6, p4294-4296, 3p
Publikováno v:
Microelectronic Engineering. 8:201-218
4″ wafers of SOI recrystallized by lamp-ZMR with localized defects have been used for the fabrication of CMOS devices in a self-aligned poly-Si gate CMOS process. An oxide thickness modulation provides an accurate localization of the defects in 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6abdf2045f878705f06fb4aca3adf6bb
https://doi.org/10.1016/0167-9317(88)90017-2
https://doi.org/10.1016/0167-9317(88)90017-2
Autor:
Monroy-Aguirre, Agustin
Th. doct. -ing.--Grenoble, I.N.P., 1980. N°: DI 148.
Externí odkaz:
http://catalogue.bnf.fr/ark:/12148/cb36090931t
Akademický článek
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Autor:
Arcamone, J., Savoye, M., Arndt, G., Philippe, J., Marcoux, C., Colinet, E., Duraffourg, L., Magis, T., Laurens, M., Monroy-Aguirre, A., Mazoyer, P., Ancey, P., Robert, P., Ollier, E.
Publikováno v:
2012 International Electron Devices Meeting; 2012, p1.4-15.4.4, 0p
Akademický článek
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