Zobrazeno 1 - 10
of 12 055
pro vyhledávání: '"Monolithic microwave integrated circuit"'
Publikováno v:
Journal of Microwaves, Optoelectronics and Electromagnetic Applications, Vol 23, Iss 4 (2024)
Abstract This paper presents a novel design of an X-band (812 GHz) 4-bit monolithic microwave integrated circuit (MMIC) type true-time-delay (TTD) line for wideband high-resolution imaging radar applications. The designed TTD line circuit offers a ma
Externí odkaz:
https://doaj.org/article/c2e4276b99a74e01ba0f13b2d9801767
Publikováno v:
مهندسی مخابرات جنوب, Vol 11, Iss 44, Pp 49-65 (2024)
In this article, high frequency power amplifier is designed based on monolithic microwave integrated circuit (MMIC) technology. For this design the process of GaN transistors with high electron mobility has been used and its length gate technology is
Externí odkaz:
https://doaj.org/article/e19b38c84e404dd299c49e586acbe5cb
Publikováno v:
IEEE Journal of Microwaves, Vol 4, Iss 4, Pp 721-732 (2024)
The number of environment-detecting sensors inside cars continuously increases, to enable failsafe autonomous driving. With more sensors, the probability of performance degrading interferences increases. A promising solution to the interferences is o
Externí odkaz:
https://doaj.org/article/7d30405b64d64ad8bd7349734cd02e54
Autor:
Junhyung Jeong, Kyujun Cho, Honggu Ji, Woojin Chang, Jongmin Lee, Byoung‐gue Min, Dongmin Kang
Publikováno v:
Electronics Letters, Vol 60, Iss 10, Pp n/a-n/a (2024)
Abstract This paper proposes an X‐band quasi Class‐F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling. To enhance efficiency, a novel
Externí odkaz:
https://doaj.org/article/2fb37fe8a39e4199a24bf2067d615ca6
Autor:
Truong, Cao1 dung.truongcao@hust.edu.vn, Hoang, Vu2
Publikováno v:
Optical & Quantum Electronics. Feb2015, Vol. 47 Issue 2, p413-421. 9p.
Autor:
Jose Luis Jimenez-Martin, Vicente Gonzalez-Posadas, Angel Parra-Cerrada, David Espinosa-Adams, Daniel Segovia-Vargas, Wilmar Hernandez
Publikováno v:
Sensors, Vol 24, Iss 10, p 3141 (2024)
A broadband differential-MMIC low-noise amplifier (DLNA) using metamorphic high-electron-mobility transistors of 70 nm in Gallium Arsenide (70 nm GaAs mHEMT technology) is presented. The design and results of the performance measurements of the DLNA
Externí odkaz:
https://doaj.org/article/a9ade9019cf04558aeaca1a02866b9d8
Autor:
Cwiklinski, Maciej (AUTHOR), Friesicke, Christian (AUTHOR), Bruckner, Peter (AUTHOR), Schwantuschke, Dirk (AUTHOR), Wagner, Sandrine (AUTHOR), Lozar, Roger (AUTHOR), Mabler, Hermann (AUTHOR), Quay, Rudiger (AUTHOR), Ambacher, Oliver (AUTHOR)
Publikováno v:
IEEE Transactions on Microwave Theory & Techniques. Dec2018, Vol. 66 Issue 12, p5664-5675. 12p.
Autor:
Li, Sih-Han (AUTHOR), Hsu, Shawn S. H. (AUTHOR), Zhang, Jie (AUTHOR), Huang, Keh-Ching (AUTHOR)
Publikováno v:
IEEE Transactions on Microwave Theory & Techniques. Dec2018, Vol. 66 Issue 12, p5676-5684. 9p.
Autor:
Laurent, S.1, Nallatamby, J. C.1, Prigent, M.1 michel.prigent@xlim.fr, Riet, M.2, Nodjiadjim, V.2
Publikováno v:
Active & Passive Electronic Components. 2012, p1-15. 15p. 13 Diagrams, 5 Charts, 13 Graphs.