Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Monja Kaiser"'
Autor:
Frans D. Tichelaar, Ruud E. I. Schropp, Jatin K. Rath, Paula C. P. Bronsveld, Monja Kaiser, Ioannis Poulios, Kees Landheer
Publikováno v:
Applied Surface Science, 396, 1226-1230. Elsevier
An Ar‑H2 plasma treatment was applied on an ultrathin RCA oxide to create well-passivated silicon wafers with symmetric c‑Si/SiOx:H/a‑Si:H passivation layer stacks. The effective lifetime of these samples increased from 10 μs to 4 ms after ann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49a2e957b75937d729d48c1869cd140a
https://doi.org/10.1016/j.apsusc.2016.11.119
https://doi.org/10.1016/j.apsusc.2016.11.119
Autor:
Ioannis Poulios, Ruud E. I. Schropp, Jatin K. Rath, Wim J. J. Soppe, Maarten Dörenkämper, Kees Landheer, Monja Kaiser
Publikováno v:
Physica Status Solidi : Rapid Research Letters, 10(10), 725-729. Wiley-VCH Verlag
We present PECVD deposition of i-a-Si:H in an in-line configuration for the fabrication of silicon heterojunction solar cells. For industry, in-line processing has the potential to increase production throughput and yield. We compared batch and in-li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1bbf05ffaf1e1c18c80881a3ef25f9c6
https://research.tue.nl/en/publications/31bc2938-97ba-4b22-ad56-8145079311fb
https://research.tue.nl/en/publications/31bc2938-97ba-4b22-ad56-8145079311fb
Publikováno v:
Journal of Crystal Growth, 467, 137-144. Elsevier
We have extensively studied by multiple microscopic techniques the growth and crystallization of silicon nanoparticles in pulsed SiH4/Ar plasmas. We observe that the crystallinity of the particles can be tuned from amorphous to crystalline by alterin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c1c344d12a931d5ea5d92a7beda4b9c1
https://research.tue.nl/nl/publications/05ec780a-5cd1-4885-a014-e09f22caa8b0
https://research.tue.nl/nl/publications/05ec780a-5cd1-4885-a014-e09f22caa8b0
Autor:
Monja Kaiser, Oliver Gröning, Jacqueline Merikhi, Peter K. Bachmann, Sarah Berhanu, Nalin L. Rupesinghe, Zexiang Chen
Publikováno v:
physica status solidi (a). 209:2114-2125
Carbon nanotubes (CNTs) are considered very promising for the realization of low-cost field emission electron sources. However, despite intensive research and development efforts, the fabrication of reliable CNT cathodes for high current density (>10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f9154e0bd5421bbc6842cf965eee246
https://doi.org/10.1002/pssa.201228296
https://doi.org/10.1002/pssa.201228296
Autor:
Monja Kaiser, F. Bakker, Ypr Yann Lamy, Wfa Besling, Hj Harry Wondergem, R. Forti, Eva Tois, Fred Roozeboom, Kb Kochupurackal Jinesh
Publikováno v:
Journal of Materials Research, 25(8), 1629-1635. Materials Research Society
The electrical and physical properties of atomic-layer-deposited EryHf1-yOx thin films have been investigated with different stoichiometries of erbium oxide (Er2O3) and hafnium oxide (HfO2). The as-deposited and annealed EryHf1-yOx films exhibit much
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07cfadfe4d9445f9ba67eca5c7f66085
https://research.tue.nl/en/publications/1f2a8664-c611-4821-9215-1e293fe3c536
https://research.tue.nl/en/publications/1f2a8664-c611-4821-9215-1e293fe3c536
Autor:
Georgios Vellianitis, Guillaume Boccardi, Monja Kaiser, Blandine Duriez, R.J.P. Lander, M.J.H. van Dal, F.C. Voogt, L Witters
Publikováno v:
IEEE Transactions on Electron Devices. 56:1548-1553
In this brief, we report on how controllable process parameters such as metal-gate physical thickness and interfacial-layer-formation method affect the electrical and structural properties of TiN/HfO2/SiO2 gate stacks. We found evidence that Hf is di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a7ada5b7025033fd0ce34e9c85c8119
https://doi.org/10.1109/ted.2009.2021718
https://doi.org/10.1109/ted.2009.2021718
Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering
Autor:
Isabelle Ferain, Liesbeth Witters, Mihaela Ioana Popovici, Thierry Conard, Barry O'Sullivan, Nadine Collaert, Malgorzata Jurczak, S. Van Elshocht, R.J.P. Lander, Ray Duffy, K. De Meyer, R. G. R. Weemaes, Rita Rooyackers, Johan Swerts, Bartek Pawlak, M.J.H. van Dal, Monja Kaiser
Publikováno v:
Solid-State Electronics. 53:760-766
At short gate lengths, narrow multiple-gate FETs (MuGFETs) are known to offer superior short channel effect (SCE) control than their bulk Si counterpart [Doyle BS et al. High performance fully-depleted tri-gate CMOS transistors. IEEE Electron Dev Let
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::056e10e1931662db053aaaa7a1b9519b
https://doi.org/10.1016/j.sse.2009.03.017
https://doi.org/10.1016/j.sse.2009.03.017
Autor:
Ray Duffy, Liesbeth Witters, Gerben Doornbos, Georgios Vellianitis, Andriy Hikavyy, Malgorzata Jurczak, Lhi-Shue Lai, Bartek Pawlak, E. Altamirano, Rita Rooyackers, Monja Kaiser, Nadine Collaert, Mark Van Dal, Blandine Duriez, Tom Vandeweyer, Rob Lander, R. G. R. Weemaes, Marc Demand
Publikováno v:
ECS Transactions. 13:223-234
FinFET is a promising device concept towards the 32 nm CMOS technology node and beyond as it combines the benefits of multi-gated architecture, intrinsically having superior scaling behavior, with a highly manufacturable process. The present paper wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4a4b8f6fe46f7c41b5ace0cfd397eb3
https://doi.org/10.1149/1.2911503
https://doi.org/10.1149/1.2911503
Autor:
Marcel A. Verheijen, A. E. Ton Kuiper, Corrie W. T. Bulle-Lieuwma, George J. Y. Zhong, Donato Pasquariello, Harry A. G. Nulens, Monja Kaiser, Liesbeth Van Pieterson
Publikováno v:
Japanese Journal of Applied Physics. 46:1037-1041
Rewritable optical digital versatile discs (DVDs) were analyzed to identify alterations in layer composition after repeated overwrite cycles. Elemental depth profiling revealed the presence of S in the phase-change layer in areas with high jitter val
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a3c69c3b0795b1172009b95ad925f0e
https://doi.org/10.1143/jjap.46.1037
https://doi.org/10.1143/jjap.46.1037
Publikováno v:
Ultramicroscopy. 106:902-908
For the successful application of carbon nanotubes (CNTs) as electron sources in various applications it is important to understand the relation between the morphology of the CNT and its emission properties. A method was developed to study individual
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd0086135ba57447028fb781169d4f66
https://doi.org/10.1016/j.ultramic.2006.04.003
https://doi.org/10.1016/j.ultramic.2006.04.003