Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Monica D. Edelstein"'
Autor:
Martha C. Ward, Monica D. Edelstein
Takes a cross-cultural approach to the study of womenA World Full of Women, 6/e, combines descriptive ethnography, gender theory, and international statistics to present a comprehensive picture of the lives of women. Readers will better comprehend an
Autor:
Joseph J. Kopanski, John S. Suehle, Curt A. Richter, Sang-Mo Koo, John E. Bonevich, Qiliang Li, Monica D. Edelstein, Eric M. Vogel
Publikováno v:
IEEE Transactions On Nanotechnology. 6:256-262
The integration of nanowires and nanotubes into electrical test structures to investigate their nanoelectronic transport properties is a significant challenge. Here, we present a single nanowire manipulation system to precisely maneuver and align ind
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d52ce16d1dc7c08b6b45da3e85aaa3a2
https://doi.org/10.1109/tnano.2007.891827
https://doi.org/10.1109/tnano.2007.891827
Autor:
Monica D. Edelstein, Martha C. Ward
Publikováno v:
A World Full of Women ISBN: 9781315662220
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a493180bd9ee5f93928e772ff80a2a27
https://doi.org/10.4324/9781315662220-11
https://doi.org/10.4324/9781315662220-11
Autor:
Monica D. Edelstein, Martha C. Ward
Publikováno v:
A World Full of Women ISBN: 9781315662220
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb17abd0bb01a8247046ddabe5ecdc12
https://doi.org/10.4324/9781315662220-8
https://doi.org/10.4324/9781315662220-8
Autor:
Monica D. Edelstein, Martha C. Ward
Publikováno v:
A World Full of Women ISBN: 9781315662220
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e676a15f4bc476366d9e558b10b0e198
https://doi.org/10.4324/9781315662220-14
https://doi.org/10.4324/9781315662220-14
Publikováno v:
Nano Letters. 5:2519-2523
Dual-gated silicon nanowire (SiNW) field-effect transistors (FETs) have been fabricated by using electron-beam lithography. SiNW devices (W approximately 60 nm) exhibit an on/off current ratio greater than 10(6), which is more than 3 orders of magnit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ebf25011b8b665280d7c3261893f104b
https://doi.org/10.1021/nl051855i
https://doi.org/10.1021/nl051855i
Publikováno v:
Nanotechnology. 16:1482-1485
Silicon nanowire field-effect transistors (SiNWFETs) have been fabricated with a highly simplified integration scheme to function as Schottky barrier transistors with excellent enhancement-mode characteristics and a high on/off current ratio ~107. Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3353c11800b750310bfa01a0c8fec391
https://doi.org/10.1088/0957-4484/16/9/011
https://doi.org/10.1088/0957-4484/16/9/011
Autor:
Monica D. Edelstein, Eric M. Vogel, Ganesh K Ramachandran, David L Blackburn, John S. Suehle, Curt A. Richter
Publikováno v:
Nanotechnology. 16:1294-1299
The formation of gold wires separated by a few nanometres is reported. Such nanometre-separated gaps are formed by ramping, at ambient conditions, a bias voltage across a thin gold wire until the wire breaks or fails. Externally heating the wire does
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06cbafae4c50116bf2343ad07e15f2bd
https://doi.org/10.1088/0957-4484/16/8/052
https://doi.org/10.1088/0957-4484/16/8/052
Publikováno v:
Microelectronic Engineering. 59:73-83
Substrate hot-electron and substrate hot-hole injection experiments are used to provide insight into defect generation and breakdown of ultra-thin silicon dioxide under constant voltage tunneling stress. Results from substrate hot-electron injection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e3a23048e24561e8af5bfcca1b54ed1
https://doi.org/10.1016/s0167-9317(01)00650-5
https://doi.org/10.1016/s0167-9317(01)00650-5
Defect generation and breakdown of ultrathin silicon dioxide induced by substrate hot-hole injection
Publikováno v:
Journal of Applied Physics. 90:2338-2346
Hole-induced bulk and interface defect generation and breakdown in ultrathin silicon dioxide (2.0 and 3.0 nm) are studied using substrate hot-hole injection. The results show that although these substrate hot holes are effective in creating electrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26609e0083af8bd2c4d3ba5f74d7d6fa
https://doi.org/10.1063/1.1389528
https://doi.org/10.1063/1.1389528