Zobrazeno 1 - 10
of 234
pro vyhledávání: '"Mong-song Liang"'
Publikováno v:
Active and Passive Electronic Components, Vol 9, Iss 1, Pp 25-29 (1981)
Externí odkaz:
https://doaj.org/article/e98d194c0fec4eb2bcf32249bdfdd4da
Autor:
Mark S. Rodder, Mong-song Liang, Cheol Kim, Taek-Soo Jeon, Dong-Won Kim, Sunjung Kim, Kittl Jorge A, Jae Hoo Park, Wookje Kim, Jongwook Jeon, Sun-Ghil Lee, Myung-Geun Song, Kab-Jin Nam, Seung-Hun Lee, Yeon-Cheol Heo, Sean Lian, Sang-Woo Lee, Uihui Kwon, Geum-Jong Bae, Dong-il Bae, Kang-ill Seo, Krishna Kumar Bhuwalka, Ki-Hyun Hwang, Yihwan Kim, E. S. Jung, Jae-Young Park
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
A novel tensile Si (tSi) and compressive SiGe (cSiGe) dual-channel FinFET CMOS co-integration scheme, aimed at logic applications for the 5nm technology node and beyond, is demonstrated for the first time, showing electrical performance benefits and
Autor:
Ling-Yen Yeh, Chun Heng Chen, Mong-Song Liang, Joseph Ya-min Lee, Chee-Wee Liu, Jun Wu, T.-L. Lee, Ming-Han Liao
Publikováno v:
IEEE Transactions on Electron Devices. 56:2848-2852
The dependence of the performance of strained NMOSFETs on channel width was investigated. When the channel width was varied, the stress in the channel varied accordingly. This changed the electron effective mass and, consequently, the on-state curren
Autor:
Y. T. Hou, Tzu-Juei Wang, K. C. Lin, P. F. Hsu, C. Y. Cheng, T. L. Lee, K. T. Huang, J. C. Liao, Mong-Song Liang, Yean-Kuen Fang
Publikováno v:
Solid-State Electronics. 53:892-896
The effects of shallow trench isolation (STI) induced mechanical strain on gate induced drain leakage (GIDL) current in Hf-based and SiON n-type metal oxide semiconductor field effect transistors (nMOSFETs) are investigated in detail. With T-CAD simu
Autor:
K. C. Lin, W. H. Wu, Mong-Song Liang, K. T. Huang, C. L. Hung, P. F. Hsu, Yean-Kuen Fang, T. L. Lee, Y. T. Hou, J. C. Liao
Publikováno v:
Thin Solid Films. 516:4222-4225
The trapping characteristics of positive bias temperature instability (PBTI) on a high-k/metal gate n-type metal oxide semiconductor field effect transistor (nMOSFET) have been investigated with a complementary multi-pulse technique (CMPT) in detail.
Autor:
Mong-Song Liang, Mao-Chieh Chen, Yong-Tian Hou, Y. Jin, Wei-Hao Wu, Bing-Yue Tsui, H.J. Tao, Shih-Chang Chen
Publikováno v:
IEEE Transactions on Electron Devices. 54:1330-1337
Transient charging and discharging of border traps in the dual-layer HfO2/SiO2 high-kappa gate stack have been extensively studied by the low-frequency charge pumping method with various input pulse waveforms. It has been demonstrated that the exchan
Autor:
H.J. Tao, Shui-Jinn Wang, Chang-Luen Wu, B.F. Hung, Mong-Song Liang, Yong-Tian Hou, F.Y. Yen, Y. Jin, A. Chin, Shui-Hung Chen
Publikováno v:
IEEE Transactions on Electron Devices. 54:257-261
A novel 1000 degC-stable IrxSi gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In
Autor:
Peng-Soon Lim, Liang-Gi Yao, Syun-Ming Jang, Y. Jin, Vincent S. Chang, S.-C. Chen, H.J. Tao, Fong-Yu Yen, Yong-Tian Hou, Mong-Song Liang, H.J. Lin, Chi Chun Chen, Peng-Fu Hsu, C.L. Hung, Jian-Yong Jiang
Publikováno v:
ECS Transactions. 1:113-123
A semi-empirical, stacked capacitor model was developed to calculate the dielectric constants (k) and deposition rates of hafnium silicate (HfSiO) deposited by nano-laminated atomic layer deposition (NL-ALD) from the HfO2 and SiO2 ALD cycles (m and n
Autor:
Jiuun-Jer Yang, Chang-Hua Yeh, Ying Jin, Chao-Sung Lai, Mong-Song Liang, Hsin-Jung Feng, Steve S. Chung, Shih-Chang Chen, Chi-Chun Chen
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 6:95-101
For the first time, a shallow trench isolation (STI)-induced enhanced degradation in pMOSFETs for ultrathin gate oxide devices has been observed. The I/sub D/ degradation is enhanced as a reduction in the gate width and the hot carrier (HC) or negati
Autor:
Lain-Jong Li, Chiu-Chih Chiang, Mao-Chieh Chen, Zhen-Cheng Wu, Syun-Ming Jang, Mong-Song Liang
Publikováno v:
Japanese Journal of Applied Physics. 43:7415-7418
In this work, we investigate the effects of oxygen (O2) and nitrogen (N2) plasma treatments on the copper surface of aluminum/amorphous silicon-nitricarbide/copper (Al/α-SiCN/Cu) metal–insulator–metal (MIM) capacitors with respect to their leaka