Large-Scale Epitaxial Integration of Single-Crystalline BiSb Topological Insulator on GaAs (111)A

Autor: Khaled, Mohamed Ali, Cancellara, Leonardo, Fekraoui, Salima, Daubriac, Richard, Bertran, François, Bigi, Chiara, Gravelier, Quentin, Monflier, Richard, Arnoult, Alexandre, Durand, Corentin, Plissard, Sébastien

Topological insulators (TI) are promising materials for future spintronics applications and their epitaxial integration would allow the realization of new hybrid interfaces. As the first materials studied, Bismuth Antimony alloys (Bi1-xSbx) show grea

Externí odkaz: http://arxiv.org/abs/2405.14450

Localization and Physical Analysis of Defects in Degraded Power HEMT p-GaN Transistors Stressed with DC Voltage Surge and Voltage with Switching Stress.

Autor: Ghizzo, Lucien, Guibaud, Gérald, De Nardi, Christophe, Jamin, François, Chazal, Vanessa, Trémouilles, David, Monflier, Richard, Richardeau, Frédéric, Bascoul, Guillaume, González Sentís, Manuel

Publikováno v: Journal of Failure Analysis & Prevention; Oct2024, Vol. 24 Issue 5, p2221-2231, 11p

Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework

Autor: Julliard, P.L., Johnsson, A., Zographos, N., Demoulin, R., Monflier, Richard, Jay, A., Er-Riyahi, O., Monsieur, F., Joblot, S., Deprat, F., Rideau, D., Pichler, P., Hémeryck, Anne, Cristiano, Fuccio

Publikováno v: Solid-State Electronics
Solid-State Electronics, 2023, 200, pp.108521. ⟨10.1016/j.sse.2022.108521⟩

International audience; Extended defects formed as a result of heated implantation and thermal annealing are studied using transmission electron microscopy and kinetic Monte Carlo simulations. We highlight the relevance of using kinetic Monte Carlo a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f53c0f852ea84c447e6d73ee87cfbd33
https://hal.laas.fr/hal-03867418

Study of recrystallization and activation processes in thin and highly doped Silicon-On-Insulator layers by nanosecond Laser Thermal Annealing

Autor: Chery, N, Zhang, M, Monflier, Richard, Seine, G, Paillard, V, Poumirol, J, Larrieu, Guilhem, Royet, A, Kerdilès, S, Acosta-Alba, P, Perego, M, Bonafos, Caroline, Cristiano, Fuccio

In this work, a thorough study of the phosphorus (P) heavy doping of thin Silicon-On-Insulator (SOI) layers by UV nanosecond Laser Thermal Annealing (LTA) is presented. The melting regimes and the regrowth processes as well as the redistribution and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b2cfe69ec072db6046fb744fcf671aaa
https://hal.archives-ouvertes.fr/hal-03454821

Study of defects induced by excimer laser annealing in silicon

Autor: Monflier, Richard

Publikováno v: Micro et nanotechnologies/Microélectronique. Université Toulouse 3 Paul Sabatier (UT3 Paul Sabatier), 2019. Français
Micro et nanotechnologies/Microélectronique. Université Paul Sabatier-Toulouse III, 2019. Français. ⟨NNT : 2019TOU30067⟩

The micro-electronic domain is constantly evolving in response to the continuous emerging of new application fields as well as new users' needs. The fabrication of heavily-doped regions for ultra-shallow junctions is a major issue to ensure its evolu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2a113206ee4bbdff2a83a74001318e61
https://hal.laas.fr/tel-02162058/document