Výsledky vyhledávání - "Mondal, Mainak"

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Optical control of multiple resistance levels in graphene for memristic applications

Autor: Mann, Harsimran Kaur, Mondal, Mainak, Sah, Vivek, Watanabe, Kenji, Taniguchi, Takashi, Singh, Akshay, Bid, Aveek

Neuromorphic computing has emphasized the need for memristors with non-volatile, multiple conductance levels. This paper demonstrates the potential of hexagonal boron nitride (hBN)/graphene heterostructures to act as memristors with multiple resistan

Externí odkaz: http://arxiv.org/abs/2407.13387

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Quantification of 2D Interfaces: Quality of heterostructures, and what is inside a nanobubble

Autor: Mondal, Mainak, Manchanda, Pawni, Saha, Soumadeep, Jangid, Abhishek, Singh, Akshay

Trapped materials at the interfaces of two-dimensional heterostructures (HS) lead to reduced coupling between the layers, resulting in degraded optoelectronic performance and device variability. Further, nanobubbles can form at the interface during t

Externí odkaz: http://arxiv.org/abs/2404.16441

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Controlled defect production in monolayer MoS2 via electron irradiation at ultralow accelerating voltages

Autor: Dash, Ajit Kumar, Swaminathan, Hariharan, Berger, Ethan, Mondal, Mainak, Lehenkari, Touko, Prasad, Pushp Raj, Watanabe, Kenji, Taniguchi, Takashi, Komsa, Hannu-Pekka, Singh, Akshay

Control on spatial location and density of defects in 2D materials can be achieved using electron beam irradiation. Conversely, ultralow accelerating voltages (less than or equal to 5kV) are used to measure surface morphology, with no expected defect

Externí odkaz: http://arxiv.org/abs/2210.04662

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Optical microscope based universal parameter for identifying layer number in two-dimensional materials

Autor: Mondal, Mainak, Dash, Ajit Kumar, Singh, Akshay

Optical contrast is the most common preliminary method to identify layer number of two-dimensional (2D) materials, but is seldom used as a confirmatory technique. We explain the reason for variation of optical contrast between imaging systems. We int

Externí odkaz: http://arxiv.org/abs/2204.12745

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Effect of electron-irradiation on layered quantum materials

Autor: Dash, Ajit Kumar, Mondal, Mainak, Verma, Manvi, Kumar, Keerthana S, Singh, Akshay

Technological advancement towards the quantum era requires secure communication, quantum computation, and ultra-sensitive sensing capabilities. Layered quantum materials (LQMs) have remarkable optoelectronic and quantum properties that can usher us i

Externí odkaz: http://arxiv.org/abs/2103.05229

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