Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Mona Elsabbagh"'
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 106:346-351
Gate dielectric scaling is a vital key to improve the steep switching characteristics of TFETs. However, scaling down the oxide thickness causes high gate leakage current that cannot be neglected. The impact of the leakage current on the device opera
In this paper, a new source-all-around tunnel field-effect transistor (SAA-TFET) is proposed and investigated by using TCAD simulation. The tunneling junction in the SAA-TFET is divided laterally and vertically with respect to the channel direction w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ee8be284b82677bd82ff500750c2563
https://doi.org/10.3762/bxiv.2019.40.v1
https://doi.org/10.3762/bxiv.2019.40.v1