Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Mona El Sabbagh"'
Publikováno v:
Alexandria Engineering Journal, Vol 91, Iss , Pp 30-38 (2024)
This study explores the optimization of a hetero-dielectric tunnel field-effect transistor (HDTFET) structure to improve device performance. By incorporating a high-k oxide pocket in a portion of the source-side gate insulator, a local minimum in the
Externí odkaz:
https://doaj.org/article/08be48c7dd4d499e9bd259eca106a766
Autor:
Marwa S. Salem, Mohamed Okil, Ahmed Shaker, Mohamed Abouelatta, Arwa N. Aledaily, Kawther A. Al-Dhlan, Mohammad T. Alshammari, Mostafa M. Salah, Mona El Sabbagh
Publikováno v:
Polymers, Vol 16, Iss 10, p 1412 (2024)
This work inspects the utilization of all-polymer solar cells (APSCs) in indoor applications under LED illumination, with a focus on boosting efficiency through simulation-based design. The study employs a SCAPS TCAD device simulator to investigate t
Externí odkaz:
https://doaj.org/article/0f672a60c9094e67b294b8bf46c7282f
Autor:
Tarek I. Alanazi, Abdulaziz Alanazi, Ezzeddine Touti, Ahmed M. Agwa, Habib Kraiem, Mohana Alanazi, Abdulrahman M. Alanazi, Mona El Sabbagh
Publikováno v:
Polymers, Vol 15, Iss 11, p 2578 (2023)
The low bandgap antimony selenide (Sb2Se3) and wide bandgap organic solar cell (OSC) can be considered suitable bottom and top subcells for use in tandem solar cells. Some properties of these complementary candidates are their non-toxicity and cost-a
Externí odkaz:
https://doaj.org/article/c82628f442864ecfb8d637850c69517b
Autor:
Tarek I. Alanazi, Mona El Sabbagh
Publikováno v:
Polymers, Vol 15, Iss 8, p 1823 (2023)
Tandem solar cells (TSCs) have attracted prodigious attention for their high efficiency, which can surmount the Shockley–Queisser limit for single-junction solar cells. Flexible TSCs are lightweight and cost-effective, and are considered a promisin
Externí odkaz:
https://doaj.org/article/2485a012eade48bda5014827d1a31c33
Publikováno v:
Applied Sciences, Vol 9, Iss 22, p 4917 (2019)
Introducing high speed networks, such as the fifth generation of mobile technology and related applications including the internet of things, creates a pressing demand for hardware infrastructure that provides sufficient bandwidth. Here, silicon-base
Externí odkaz:
https://doaj.org/article/9250ad8e3e6b4091a4153a763ee654ea
Publikováno v:
Optical and Quantum Electronics. 52
A novel electro-optic modulator using the silicon-on-silica platform is proposed. The modulator utilizes a modified version of the gate-all-around switching mechanism which is well-known in MOSFET transistors. The waveguide silicon core is surrounded
Publikováno v:
2018 13th International Conference on Computer Engineering and Systems (ICCES).
A metal-oxide-semiconductor electro-optic modulator is proposed. The modulator is based on silicon-on-insulator technology. The metallic electrodes are positioned in order to minimize the optical absorption losses. This results in the advantages of v
Publikováno v:
Micro & Nano Letters. 11:114-117
Temperature dependence of the characteristics of a Schottky-barrier carbon nanotube field effect transistor has been investigated in detail. This study was performed using two-dimensional quantum simulator based on self-consistent solution of non-equ
Publikováno v:
Optik. 217:164928
The design of a novel inexpensive CMOS-compatible compact electro-optic modulator is proposed. The modulator features simple fabrication process with only one mask required for the doping stage. Its performance parameters include a 130 G b p s of NRZ
Publikováno v:
Applied Sciences
Volume 9
Issue 22
Applied Sciences, Vol 9, Iss 22, p 4917 (2019)
Volume 9
Issue 22
Applied Sciences, Vol 9, Iss 22, p 4917 (2019)
Introducing high speed networks, such as the fifth generation of mobile technology and related applications including the internet of things, creates a pressing demand for hardware infrastructure that provides sufficient bandwidth. Here, silicon-base