Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Mona A. Ebrish"'
Autor:
James C. Gallagher, Michael A. Mastro, Mona A. Ebrish, Alan G. Jacobs, Brendan P. Gunning, Robert J. Kaplar, Karl D. Hobart, Travis J. Anderson
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-11 (2023)
Abstract To improve the manufacturing process of GaN wafers, inexpensive wafer screening techniques are required to both provide feedback to the manufacturing process and prevent fabrication on low quality or defective wafers, thus reducing costs res
Externí odkaz:
https://doaj.org/article/1ac3926697a74e94a44d8726bab50e74
Autor:
James C. Gallagher, Mona A. Ebrish, Matthew A. Porter, Alan G. Jacobs, Brendan P. Gunning, Robert J. Kaplar, Karl D. Hobart, Travis J. Anderson
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract To improve the manufacturing of vertical GaN devices for power electronics applications, the effects of defects in GaN substrates need to be better understood. Many non-destructive techniques including photoluminescence, Raman spectroscopy a
Externí odkaz:
https://doaj.org/article/0ec73626ce3f472a8ac3201e0452ada9
Autor:
Mona A. Ebrish, Matthew A. Porter, Alan G. Jacobs, James C. Gallagher, Robert J. Kaplar, Brendan P. Gunning, Karl D. Hobart, Travis J. Anderson
Publikováno v:
Crystals, Vol 12, Iss 5, p 623 (2022)
GaN vertical PiN diodes with different anode thicknesses were fabricated on three native GaN wafers with the same p-layer doping concentrations, and planar hybrid edge termination. The breakdown behavior in terms of the breakdown voltage and the elec
Externí odkaz:
https://doaj.org/article/6a128e555ceb4faa996a20fa424064b2
Autor:
Prakash Pandey, Tolen M. Nelson, William M. Collings, Michael R. Hontz, Daniel G. Georgiev, Andrew D. Koehler, Travis J. Anderson, James C. Gallagher, Geoffrey M. Foster, Alan Jacobs, Mona A. Ebrish, Brendan P. Gunning, Robert J. Kaplar, Karl D. Hobart, Raghav Khanna
Publikováno v:
IEEE Transactions on Electron Devices. 69:5096-5103
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1aede49f7afb7bb7f76d0543d68ac684
https://doi.org/10.1109/ted.2022.3192796
https://doi.org/10.1109/ted.2022.3192796
Autor:
Suzanne E. Mohney, Mona A. Ebrish, Alex Molina, Rongming Chu, Mansura Sadek, Jianan Song, Sang-Woo Han, Travis J. Anderson
Publikováno v:
IEEE Transactions on Electron Devices. 68:5736-5741
This article reports GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs) with substantially improved performance. Metal-2DEG sidewall n-ohmic contacts were deployed to achieve low contact resistance of $0.75~\Omega ~ \cdot ~mm$ , avoiding the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af4d3d89381087721a5d3071a2f3f067
https://doi.org/10.1109/ted.2021.3111543
https://doi.org/10.1109/ted.2021.3111543
Autor:
Michael A. Mastro, Yekan Wang, James C. Gallagher, Michael E. Liao, Mona A. Ebrish, Boris N. Feigelson, Karl D. Hobart, Mark S. Goorsky, Jennifer K. Hite, Alan G. Jacobs, Travis J. Anderson
Publikováno v:
Journal of Electronic Materials. 50:4642-4649
In light of the importance of selective area doping in GaN to enable planar process technology, and to avoid the complications from the etch/regrowth process, ion implantation is the recognizable alternative. Annealing to activate dopant species and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f851a284c0b1bf596693b5f7ae2f912b
https://doi.org/10.1007/s11664-021-08984-8
https://doi.org/10.1007/s11664-021-08984-8
Autor:
G. M. Foster, Andrew D. Koehler, James C. Gallagher, Jennifer K. Hite, Mona A. Ebrish, Brendan P. Gunning, Travis J. Anderson, Karl D. Hobart, Michael A. Mastro, Robert Kaplar, Francis J. Kub
Publikováno v:
Journal of Electronic Materials. 50:3013-3021
Present GaN technology consists primarily of heteroepitaxial, lateral high electron mobility transistors; however, high-power devices would be much more efficiently manufactured with a vertical geometry due to better blocking voltage scaling. This te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::285511fb8c7b55cfc8ef32c2b55111b1
https://doi.org/10.1007/s11664-021-08840-9
https://doi.org/10.1007/s11664-021-08840-9
Autor:
Prakash Pandey, William Collings, Sadab Mahmud, Tolen Nelson, Michael R. Hontz, Daniel G. Georgiev, Andrew D. Koehler, Travis J. Anderson, James C. Gallagher, Geoffrey M. Foster, Alan Jacobs, Mona A. Ebrish, Karl D. Hobart, Raghav Khanna
Publikováno v:
2022 IEEE Applied Power Electronics Conference and Exposition (APEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c2e72bcbd4e59ef6d4b2060bcce3bac
https://doi.org/10.1109/apec43599.2022.9773766
https://doi.org/10.1109/apec43599.2022.9773766
Autor:
James C. Gallagher, Travis J. Anderson, Mona A. Ebrish, Robert Kaplar, Karl D. Hobart, Brendan P. Gunning, G. M. Foster, Andrew D. Koehler
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 33:546-551
GaN is a favorable martial for future efficient high voltage power switches. GaN has not dominated the power electronics market due to immature substrate, homoepitaxial growth, and immature processing technology. Understanding the impact of the subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::588b907e2fdb897a1c12d38ac3b1ace0
https://doi.org/10.1109/tsm.2020.3019212
https://doi.org/10.1109/tsm.2020.3019212
Autor:
Jaime A. Freitas, Travis J. Anderson, Michael A. Mastro, James C. Gallagher, Jennifer K. Hite, Mona A. Ebrish
Publikováno v:
ECS Transactions. 98:63-67
Vertical GaN power switch technology is expected to be utilized in next-generation medium to high voltage power converters due to the low ON-resistance and high breakdown voltage enabled by the improved critical electric field and mobility compared t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1a994d66d5087cd4e4a46d903e5ecdc
https://doi.org/10.1149/09806.0063ecst
https://doi.org/10.1149/09806.0063ecst