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pro vyhledávání: '"Mon-Song Lian"'
Publikováno v:
IEEE Electron Device Letters. 22:71-73
A nonsilicide source/drain pixel is proposed for high performance 0.25-/spl mu/m CMOS image sensor. By using organic material spin coat and etch back, silicide is only formed on poly gate which can be used as interconnection, not for source/drain reg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ca7cc7dfbac766d237ab67ce2b9a8e6
https://doi.org/10.1109/55.902835
https://doi.org/10.1109/55.902835
Publikováno v:
IEEE Electron Device Letters; Feb2001, Vol. 22 Issue 2, p71-73, 3p