Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Mon-Sen Lin"'
Autor:
Chih-Chun Hu, Mon-Sen Lin, Yeong-Her Wang, Po-Wen Sze, Chang-Luen Wu, Feri Adriyanto, Tsu-Yi Wu
Publikováno v:
IEEE Transactions on Electron Devices. 59:121-127
Barium-doped TiO2 films deposited on GaN layers at low temperature through a simple liquid phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) is a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25d1437bb630d7177fe75897ff586b8b
https://doi.org/10.1109/ted.2011.2171690
https://doi.org/10.1109/ted.2011.2171690
Autor:
Mon-Sen Lin, Chih-Wei Yang, Chien-Ting Lin, Jian-Cun Ke, Wen-Tai Chiang, Ying-Tsung Chen, Shoou-Jinn Chang
Publikováno v:
IEEE Electron Device Letters. 35:306-308
We propose the use of atomic layer deposition (ALD) TiN barrier to replace physical vapor deposition TiN barrier for high- k last/gate last pMOS devices with a chemical oxide interfacial layer in 20-nm technology node. It was found that the pMOS devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2019448aa69527b9eaf30e48a5cfb8a2
https://doi.org/10.1109/led.2013.2297341
https://doi.org/10.1109/led.2013.2297341
Autor:
Shoou-Jinn Chang, Chiang Wen Tai, Mon Sen Lin, Chien-Ting Lin, Fu Ssu I, Chen Ying Tsung, Jyh Shyang Jenq
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31:020604
The authors report the use of postdeposition annealing (PDA) to improve the performance of a high-k (HK)-last/gate-last integration scheme involving the use of a chemical oxide interfacial layer (IL). They find that the chemical oxide IL can form Hf-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a9abf4c7cdf1fd1a3f53ff863b9e2d2
https://doi.org/10.1116/1.4793739
https://doi.org/10.1116/1.4793739
Autor:
Mon Sen Lin, Po Wen Sze, Yeong-Her Wang, Chih Chun Hu, Chang Luen Wu, Feri Adriyanto, Tsu Yi Wu
Publikováno v:
ECS Meeting Abstracts. :1925-1925
Barium-doped TiO2 films deposited on GaN layers at low temperature through a simple liquid-phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) is a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d848921fb8f00d363ad1cebcfd2f23f
https://doi.org/10.1149/ma2011-02/27/1925
https://doi.org/10.1149/ma2011-02/27/1925