Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Momtaz, Zahra S"'
Autor:
da Silva, Bruno C, Momtaz, Zahra S, Bruas, Lucas, Rouviére, Jean-Luc, Okuno, Hanako, Cooper, David, Den-Hertog, Martien I
Publikováno v:
Applied Physics Letters, American Institute of Physics, 2022, 121 (12), pp.123503
Momentum resolved 4D-STEM, also called center of mass (CoM) analysis, has been used to measure the long range built-in electric field of a silicon p-n junction. The effect of different STEM modes and the trade-off between spatial resolution and elect
Externí odkaz:
http://arxiv.org/abs/2211.00971
Autor:
da Silva, Bruno C., Momtaz, Zahra S., Monroy, Eva, Okuno, Hanako, Rouviere, Jean-Luc, Cooper, David, den-Hertog, Martien I.
A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron microscopy and off-axis electron holography have opened up the possib
Externí odkaz:
http://arxiv.org/abs/2209.09633
Autor:
da Silva, Bruno C., Momtaz, Zahra S., Bruas, Lucas, Rouviére, Jean-Luc, Okuno, Hanako, Cooper, David, den-Hertog, Martien I.
Publikováno v:
Applied Physics Letters; 9/19/2022, Vol. 121 Issue 12, p1-8, 8p
