An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs

Autor: Goo, J.S., Choi, C.H., Danneville, F., Morifuji, E., Momose, H.S., Yu, Z., Iwai, H., Lee, T.H., Dutton, R.W.

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2000, 47, pp.2410-2419
IEEE Transactions on Electron Devices, 2000, 47, pp.2410-2419

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::698a9aceb2f9063c2ebd04cc2cf8cfe5
https://hal.archives-ouvertes.fr/hal-00157860

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