Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Momorias resistivas"'
Autor:
Dueñas Carazo, Salvador, Castán Lanaspa, María Helena, González Ossorio, Óscar, Domínguez, Leidy Azucena, García García, Héctor, Kalam, Kristjan, Kukli, Kaupo, Ritala, Mikko, Leskelä, Markku
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
UVaDOC: Repositorio Documental de la Universidad de Valladolid
Universidad de Valladolid
instname
UVaDOC: Repositorio Documental de la Universidad de Valladolid
Universidad de Valladolid
Producción Científica The resistive switching behavior of Ta 2 O 5 -ZrO 2 -based metal-insulator-metal devices was studied. Asymmetrical and repetitive current-voltage loops were observed. Excellent control of admittance parameters in the intermedi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2bbff9f0a2f8a32b2c53df9f03bb311e
https://doi.org/10.1109/DCIS.2017.8311627
https://doi.org/10.1109/DCIS.2017.8311627
Autor:
Dueñas Carazo, Salvador, Castán Lanaspa, María Helena, González Ossorio, Óscar, Domínguez, Leidy Azucena, García García, Héctor, Kalam, Kristjan, Kukli, Kaupo, Ritala, Mikko, Leskelä, Markku
Producción Científica
The resistive switching behavior of Ta 2 O 5 -ZrO 2 -based metal-insulator-metal devices was studied. Asymmetrical and repetitive current-voltage loops were observed. Excellent control of admittance parameters in the inte
The resistive switching behavior of Ta 2 O 5 -ZrO 2 -based metal-insulator-metal devices was studied. Asymmetrical and repetitive current-voltage loops were observed. Excellent control of admittance parameters in the inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3ffdf57701fd03a591911a89e04f26d2
http://hdl.handle.net/10138/310756
http://hdl.handle.net/10138/310756